VS-8EWS12STRRPBF Allicdata Electronics
Allicdata Part #:

VS-8EWS12STRRPBF-ND

Manufacturer Part#:

VS-8EWS12STRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1.2KV 8A D-PAK
More Detail: Diode Standard 1200V 8A Surface Mount D-PAK (TO-25...
DataSheet: VS-8EWS12STRRPBF datasheetVS-8EWS12STRRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The modern VS-8EWS12STRRPBF is a single rectifier diode that utilizes advanced packaging technology to make itself one of the most efficient diodes on the market. It is made of silicon, and its properties make it ideal for many applications, including detection and rectification of power signals.The VS-8EWS12STRRPBF consists of two p-n junctions of silicon. It has an anode, cathode and a body. Its anode is connected to the +ve supply, while its cathode is connected to the –ve supply. The p-n junctions between these two terminals are used to direct the current flow in one direction, allowing the diode to perform its task of rectifying power signals.When current is flowing through the diode, it has a forward voltage drop between the anode and cathode. This voltage drop is known as the forward voltage and is usually between 0.3 and 0.7V. When the anode is connected to a higher voltage than the cathode, the diode is in a forward biased state, which allows current to flow through it in a controlled manner. When the anode is connected to a lower voltage than the cathode, the diode is in a reverse bias state, which does not allow current to flow through it. This is the main principle behind rectification of power signals.The VS-8EWS12STRRPBF has two active areas when it is in a forward biased state. One is the anode-cathode area, which allows current to flow through the diode, while the other is the junction area between the anode-cathode and the body. The junction area is made up of layers of silicon dioxide that act as a dielectric, allowing the forward voltage to remain low while allowing current to flow. This makes the diode ideal for use in applications such as rectification of power signals.The VS-8EWS12STRRPBF can be used in a variety of applications where rectification of power signals is necessary. It can be used to convert alternating current (AC) to direct current (DC) and can be used in circuits that require a signal with a constant voltage or current. It can also be used in signal switching applications, as it has a low forward voltage drop and a fast switching speed. It is also used in battery charging and discharge applications, and can be used to regulate power in solar energy systems.The VS-8EWS12STRRPBF is a versatile diode with many applications. Its low forward voltage drop, fast switching speed and high efficiency makes it ideal for use in a variety of applications. Its ability to rectify power signals allows it to be used in applications that require a constant voltage or current, as well as in battery charging and discharge applications. It is also a great choice for signal switching, as it has a low forward voltage drop and fast switching speed.

The specific data is subject to PDF, and the above content is for reference

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