VS-8TQ080GSTRRPBF Allicdata Electronics
Allicdata Part #:

VS-8TQ080GSTRRPBF-ND

Manufacturer Part#:

VS-8TQ080GSTRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 80V 8A TO263AB
More Detail: Diode Schottky 80V 8A Surface Mount TO-263AB (D²PA...
DataSheet: VS-8TQ080GSTRRPBF datasheetVS-8TQ080GSTRRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 280µA @ 80V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Diodes - Rectifiers - Single

The VS-8TQ080GSTRRPBF is a Diode- Rectifiers - Single , built by Vishay semiconductor. It is a surface mount, dual anode Schottky Rectifier with centre tap, aimed specifically at high frequency switching applications, where size and weight are key considerations.

Application field and working principle

The VS-8TQ080GSTRRPBF has a wide range of applications, including power supplies, motor control, lighting and many electrical digital signal array devices. It has a typical forward current of 8 A, a maximum forward voltage of 1.25 V, and has a reversible processes capability at speeds of up to 5 kHz. The diode has a typical forward-bias voltage of 1.4 V. The VS-8TQ080GSTRRPBF works based on the principle of a voltage drop, in which electrons are "pushed" from one layer of the diode to the other, allowing electrical current to flow in one direction, while blocking it in the other. When the forward current is at its maximum, the reverse current is blocked due to the saturated-state of the device. The VS-8TQ080GSTRRPBF is constructed of Silicon, and therefore has a transient and thermal response that is much faster than any other diodes available today. That means that the diode is able to switch on and off much faster and with greater precision than other similar diodes. This is especially useful in high-frequency switching and power-regulation applications. TheVS-8TQ080GSTRRPBF also has a low reverse leakage current, meaning that it can better protect against over-voltage and over-current conditions, versus diodes that are constructed using Germanium or other materials. The total capacitance of the diode is also much lower than that of other materials, adding to its efficient operation.

Conclusion

To conclude, theVS-8TQ080GSTRRPBF is a very efficient and reliable device and is ideal for use in power-regulation, lighting, and motor-control applications. Its low reverse leakage current and fast transient response make it ideal for use in high-frequency switching applications, and its small size means that it can be easily integrated into electronic devices and systems.

The specific data is subject to PDF, and the above content is for reference

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