VS-ETH0806-M3 Allicdata Electronics
Allicdata Part #:

VS-ETH0806-M3-ND

Manufacturer Part#:

VS-ETH0806-M3

Price: $ 0.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 8A TO220-2
More Detail: Diode Standard 600V 8A Through Hole TO-220-2
DataSheet: VS-ETH0806-M3 datasheetVS-ETH0806-M3 Datasheet/PDF
Quantity: 1306
1 +: $ 0.69300
10 +: $ 0.62244
100 +: $ 0.48516
500 +: $ 0.40081
1000 +: $ 0.31643
Stock 1306Can Ship Immediately
$ 0.76
Specifications
Series: FRED Pt®
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 21ns
Current - Reverse Leakage @ Vr: 12µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Description

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Introduction to VS-ETH0806-M3

The VS-ETH0806-M3 is a rectifier diode featuring high-temperature operation and ultra-low voltage forward drop. It is optimized for high-speed switching, and features a low forward voltage and low reverse leakage. The diode has a wide operating temperature range, from -55 to +125 C, and delivers superior performance in harsh application environments.

Application Fields and Working Principle

Application Fields

The VS-ETH0806-M3 is ideal for use in high-speed switching applications, such as switch mode power supplies, motor controls, and DC-DC converters. It is well suited for use in DC output circuits, as well as in rectifier bridge applications. Additionally, the diode is designed to eliminate voltage drop on the rectifier line and thus reduce heat buildup.

Working Principle

The VS-ETH0806-M3 rectifier diode is a type of semiconductor device that allows current to flow in only one direction with a high degree of efficiency. It consists of a p-n junction which contains two layers of doped semiconductor material – an anode which is positively charged, and a cathode which is negatively charged. When an external voltage is applied to the diode, the positive anode attracts electrons to the junction and the negative cathode repels them away, creating a forward bias and allowing current to flow.

When the forward voltage is larger than the reverse breakdown voltage, the diode is in its “on” state, allowing current to flow through the junction with minimal resistance. When the voltage is reversed, the diode is in its “off” state, effectively blocking current from passing through. The fast switching speed and low reverse leakage of the VS-ETH0806-M3 make it especially useful in high-speed switching applications.

Conclusion

The VS-ETH0806-M3 rectifier diode is an ideal choice for use in high-speed switching applications. Its low forward voltage and low reverse leakage, coupled with its wide operating temperature range and superior performance in harsh conditions, make it an excellent solution for high performance applications. With its fast switching speed and excellent thermal stability, the VS-ETH0806-M3 is sure to be a reliable and cost-effective component in any design.

The specific data is subject to PDF, and the above content is for reference

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