Allicdata Part #: | VS-ETH1506STRRHM3-ND |
Manufacturer Part#: |
VS-ETH1506STRRHM3 |
Price: | $ 1.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 15A TO263AB |
More Detail: | Diode Standard 600V 15A Surface Mount TO-263AB (D²... |
DataSheet: | VS-ETH1506STRRHM3 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.29476 |
Series: | Automotive, AEC-Q101, FRED Pt® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 2.45V @ 15A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 15µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB (D²PAK) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes are components used in most electronic circuits and are characterized by their ability to conduct current only in a single direction while presenting significant resistance to current flowing in the reverse direction. Rectifiers are also electronic components that convert AC voltage into DC voltage. Single rectifiers are components which are made of one or several diodes and they are used to rectify the current in one direction at a time. The VS-ETH1506STRRHM3 is a single rectifier diode that has a wide range of applications and various advantages for users.
The VS-ETH1506STRRHM3 is used for a wide range of applications such as telecom, automotive, audio and data systems, aerospace, signal processing, lighting, and power supplies. Designed for high surge and current applications, it is suitable for polyphase bridge rectifiers in higher power single phase applications. It also offers excellent thermal cycling and current interruption performance. The low forward voltage drop, reverse leakage current, and highest avalanche voltage for its type make it a unique and efficient device.
The working principle of the VS-ETH1506STRRHM3 is based on PN junction diodes. A PN junction diode is created when two semiconductor materials doped p type and n type are joined together. This device conducts current in one direction only due to the PN junction effect created by the two materials. It also has two regions, an anode and a cathode, and when an external voltage is applied, the positive battery terminal is the anode and the negative is the cathode. Whenever a voltage higher than the forward voltage is applied, the PN junction will conduct current, allowing current to flow through the entire device.
The VS-ETH1506STRRHM3 also has several advantages compared to traditional rectifiers. The ultra-low forward voltage drop and reverse leakage current of the diode makes it more efficient, allowing for more power savings. Furthermore, its avalanche voltage capabilities are also much higher than other comparable components and this ensures the VS-ETH1506STRRHM3 is suitable for higher power applications that require more than traditional rectifiers can deliver.
In conclusion, the VS-ETH1506STRRHM3 is a single rectifier diode with a wide range of applications and excellent thermal cycling and current interruption performance. It has a low forward voltage drop, reverse leakage current, and highest avalanche voltage for its type, making it a unique and efficient device. It is suitable for polyphase bridge rectifiers in higher power single phase applications and is an excellent choice for users looking for a high surge and current single rectifier.
The specific data is subject to PDF, and the above content is for reference
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