Allicdata Part #: | VS-ETU1506STRL-M3-ND |
Manufacturer Part#: |
VS-ETU1506STRL-M3 |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 15A TO263AB |
More Detail: | Diode Standard 600V 15A Surface Mount TO-263AB (D²... |
DataSheet: | VS-ETU1506STRL-M3 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.57450 |
Specifications
Series: | FRED Pt® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 1.07V @ 15A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 210ns |
Current - Reverse Leakage @ Vr: | 15µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB (D²PAK) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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Introduction to VS-ETU1506STRL-M3
The VS-ETU1506STRL-M3 is a three-terminal, single diode rectifier ideal for power supply systems too large for integrated circuits. It is a low-drop Schottky barrier rectifier designed for high-current, high-efficacy power supplies.Application Field
The high-current, high-efficacy power supplies where the VS-ETU1506STRL-M3 performs best come in a variety of flavors and duty cycles. Such applications include, but are not limited to, high-end workstation and server power supply systems, critical enclosure battery charging systems, medium and high frequency switch-mode power supplies, telecom and data center power supplies, ruggedized vehicle power supplies, and high-end automotive power systems.Working Principle
The VS-ETU1506STRL-M3 operates on the Schottky Barrier principle, effectively rectifying current flowing across a metal-semiconductor junction between its three terminals. This principle allows for the unit’s high-efficiency, fast switching times, and low forward drop. The metal-semiconductor junction is formed by depositing a metal coating on a semiconductor substrate. This allows electrons to move from the metal to the semiconductor as current flows across the junction. This movement of electrons creates a field of electrons in the semiconductor near the interface of the metal and the semiconductor, thus forming the Schottky Barrier. In addition, the VS-ETU1506STRL-M3 features peak repetitive reverse voltage ratings of up to 15 Volts, maximum repetitive forward current ratings of 6 Amps, and maximum transient forward current ratings of 15 Amps. Its robust surge handling capabilities make it a ideal choice for critical power supplies exposed to high currents and voltages.Conclusion
The VS-ETU1506STRL-M3 is a reliable and efficient rectifier, perfect for a wide range of applications including high-end workstation and server systems, critical enclosure battery charging systems, telecom and data center power supplies, ruggedized vehicle power supplies, and automotive power systems. It’s low-drop Schottky barrier design allows for high current, high efficacy power supplies, and its peak repetitive reverse voltage ratings of up to 15 volts, maximum repetitive forward current ratings of 6 Amps, and maximum transient forward current ratings of 15 Amps ensure it can handle the toughest of surge events.The specific data is subject to PDF, and the above content is for reference
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