Allicdata Part #: | VS-ETX3007THN3GI-ND |
Manufacturer Part#: |
VS-ETX3007THN3 |
Price: | $ 1.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 650V 30A TO220AC |
More Detail: | Diode Standard 650V 30A Through Hole TO-220AC |
DataSheet: | VS-ETX3007THN3 Datasheet/PDF |
Quantity: | 2000 |
1 +: | $ 1.07100 |
50 +: | $ 0.90959 |
100 +: | $ 0.77496 |
500 +: | $ 0.63669 |
1000 +: | $ 0.52755 |
Series: | Automotive, AEC-Q101, FRED Pt® |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 650V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 2.5V @ 30A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 30µA @ 650V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The VS-ETX3007THN3 is a Single Diodes Rectifier. It is a highly efficient and reliable diode for general purpose rectification applications. It has low reverse recovery time, low EMI and low switching losses, making it suitable for a wide range of applications. This diode can be used for voltage regulation, power conversion, automotive, industrial and telecom applications.
The VS-ETX3007THN3 is a low-VFET type diode with a maximum reverse voltage of 200V, a maximum forward current of 1.2A and a reverse leakage of 10μA or less. It is high-performance, low-loss rectifier diode built with an advanced doping technology that provides superior performance. The device has an enhanced body diode with low capacitance and high reverse current capabilities. Its fast recovery time results in low switching losses and minimal distortion. This device also has a low thermal resistance and a very low profile, making it suitable for space-constrained applications.
The VS-ETX3007THN3 has a wide range of applications, from regulating voltage in power supplies to converting power in automotive, industrial and telecom applications. It is ideal for use in surface mount applications, such as DIP sockets, chip sockets and LED lighting. It can also be used to provide additional protection for sensitive electronics in harsh environments. This device is also suitable for use in high-end power modules and converters.
The working principle of the VS-ETX3007THN3 is simple. When Vf is applied, the diode conducts forward current from anode to cathode. When Vr is applied, the diode conducts reverse current from cathode to anode. The forward current of VS-ETX3007THN3 is regulated by the junction temperature and the reverse current is determined by the doping of the diode. When reverse voltage is applied, the diode pulls away the majority carriers from the junction, resulting in the depletion region. This result in a high-resistance region and the current goes to zero.
The VS-ETX3007THN3 is a versatile and highly efficient diode with low EMI and switching losses. It can be used in a wide range of applications such as voltage regulation, power conversion, automotive, industrial and telecom applications. This diode has superior reverse current capabilities, low capacitance, low thermal resistance and a low profile design, making it suitable for space-constrained applications. This device is also suitable for use in high-end power modules and converters.
The specific data is subject to PDF, and the above content is for reference
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