
Allicdata Part #: | VS-HFA04SD60STR-M3-ND |
Manufacturer Part#: |
VS-HFA04SD60STR-M3 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 4A D-PAK |
More Detail: | Diode Standard 600V 4A Surface Mount D-PAK (TO-252... |
DataSheet: | ![]() |
Quantity: | 1000 |
2000 +: | $ 0.49384 |
Series: | HEXFRED® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 42ns |
Current - Reverse Leakage @ Vr: | 3µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes and rectifiers are among the most important electronic components. In the most basic sense, they are used to convert alternating current (AC) into direct current (DC). The VS-HFA04SD60STR-M3 is a single rectifier diode, commonly used in AC to DC conversion.
Design
The VS-HFA04SD60STR-M3 is a single rectifier diode. Its main feature is the ability to handle up to 4A continuous current at 60 volts and 12A peak current. It is constructed from a PN junction between aluminum gallium arsenide (AlGaAs)-based layers and gallium arsenide (GaAs)-based layers. It has a form factor of SOT-223 (or SOT-89), with a low thermal resistance of 1.40K/W. The unit has a maximum junction temperature of 175°C in normal operating conditions and a maximum storage temperature of 225°C. The diode has a maximum reverse leakage current of 4.7V at a temperature of 25°C. It has a minimum standoff voltage of 600V and a maximum recovery time of 300ns.
Applications
The VS-HFA04SD60STR-M3 is commonly used in AC to DC conversion applications such as power converters and AC motor drives. It is also used in telecommunication systems, automotive systems, instrumentation systems, and power distribution systems. In addition, the unit is suitable for use in switching mode power supplies, as well as for electric vehicles and electric bikes. It is also suitable for use in off-grid solar power supply systems.
Working Principle
The VS-HFA04SD60STR-M3 rectifier diode works on the principle of the PN junction. The PN junction comprises of two semiconductor layers: a P-type layer and an N-type layer. When the P-type layer is connected to the positive terminal of the power source, current flows through the diode due to diffusion of P-type and N-type dopants across the junction. This allows the current to be conducted in the forward direction. When the positive terminal of the power source is connected to the N-type layer, the diode is said to be in the reverse direction and current does not flow due to the opposite polarities.
Conclusion
The VS-HFA04SD60STR-M3 is a single rectifier diode designed for use in AC to DC conversion applications. It is constructed from a PN junction between AlGaAs-based layers and GaAs-based layers. This diode is commonly used in power converters, AC motor drives, telecommunication systems, automotive systems, instrumentation systems, power distribution systems, and off-grid solar power supply systems. It works on the principle of the PN junction, where current is only allowed to flow in the forward direction.
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