| Allicdata Part #: | VS-HFA08PB60-N3GI-ND |
| Manufacturer Part#: |
VS-HFA08PB60-N3 |
| Price: | $ 3.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 600V 8A TO247AC |
| More Detail: | Diode Standard 600V 8A Through Hole TO-247AC Modif... |
| DataSheet: |  VS-HFA08PB60-N3 Datasheet/PDF |
| Quantity: | 92 |
| 1 +: | $ 2.77200 |
| 25 +: | $ 2.35318 |
| 100 +: | $ 2.03937 |
| 500 +: | $ 1.73608 |
| 1000 +: | $ 1.46416 |
| Series: | HEXFRED® |
| Packaging: | Tube |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 8A |
| Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 55ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 600V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-2 |
| Supplier Device Package: | TO-247AC Modified |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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A diode is a semiconductor device which allows current to flow in one direction, but not in the other. The VS-HFA08PB60-N3 is an example of a single rectifier diode which is used in a variety of applications. This article discusses the applications and working principles of this device.
Applications of VS-HFA08PB60-N3
The VS-HFA08PB60-N3 diode is suitable for a wide range of applications. It is often used in DC-DC power converters and motor drives where high reverse voltage, low forward voltage drop, and low loss are required. This device can also be used as a protection diode in AC phase control and lamp dimming circuits. Other applications include AC adapters, battery chargers, as well as flyback and forward converters.
Working Principle of VS-HFA08PB60-N3
The diode consists of an anode and a cathode, with two semiconductor layers between them. One of the layers is made up of a P-type material, while the other is made up of an N-type material. When a positive voltage is applied to the anode, electrons are attracted to the P-type layer from the N-type layer. This creates a region of negative charge around the P-type layer, known as the depletion region. This region has a potentially large resistance which prevents current from flowing in the reverse direction.
When the forward voltage is applied to the anode, the electrons from the N-type layer flow through this region. As this happens, the depletion region becomes narrower and the resistance decreases, allowing more current to flow. The result of this is a low forward voltage drop and a low forward current.
Conclusion
The VS-HFA08PB60-N3 diode is a single rectifier diode which is used in a variety of applications. Its low forward voltage drop and low forward current make it suitable for applications such as DC-DC power conversion, motor drives, protection circuits, AC adapters, and battery chargers. Its working principle is based on electron flow through a narrowing of the depletion region.
The specific data is subject to PDF, and the above content is for reference
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