VS-HFA30PA60C-N3

Series:	HEXFRED®
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	600V
Current - Average Rectified (Io) (per Diode):	15A
Voltage - Forward (Vf) (Max) @ If:	1.7V @ 1.5A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	60ns
Current - Reverse Leakage @ Vr:	10µA @ 600V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC

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The VersaMOS™ HFA30PA60C-N3 is a 30V, 3-phase Power MOSFET array device and is among the range of power MOSFET arrays introduced by STMicroelectronics. It includes a controller with high voltage gates and is specifically designed for applications requiring high voltage isolation for switching and signal conditioning. The HFA30PA60C-N3 is the ideal choice for a variety of applications, such as motor control, DC-DC conversion and lighting.Applications of HFA30PA60C-N3The HFA30PA60C-N3 device is ideal for a range of switched mode power conversion applications as it integrates an application specific integrated circuit (ASIC). The ASIC comprises of four Half-Bridge driver blocks which control the full power MOSFET outputs and are capable of delivering high peak currents up to 2A (100ns) and low on-state resistance of 1.2mΩ. This flexibility makes it the perfect choice for applications such as motor control, DC-DC conversion, and lighting control.Moreover, this device offers an elevated back-gate VBIAS capability and provides increased immunity to false turn-on due to negative input transients. HFA30PA60C-N3 is specifically designed for use in applications requiring enhanced transient protection vs. over-voltage transients, making it the optimal choice for built-in overvoltage protection (OVP) and overcurrent protection (OCP).The HFA30PA60C-N3 is suitable for applications with high system cost sensitivity such as SMPS, VRMs, and DC-DC converters that are used in servers for wireless base station, power supplies for Telecommunications applications, and automotive headlamps, as well as industrial automation, including lighting control systems and motor control applications.Working Principle of HFA30PA60C-N3The VersaMOS™ HFA30PA60C-N3 combines four half-bridge phase blocks, each with a high voltage driver gate voltage and sophisticated gate protection circuit, providing efficient and reliable gate drive to the power MOSFETs. The gate protection circuit monitors the gate voltage of each phase and provides a controlled turn-off time to reduce excessive dissipation and ensure reliable operation.The HFA30PA60C-N3 includes a built-in OVP function which offers protection to systems against sustained overvoltage conditions. It also integrates an adjustable OCP function to monitor the load current level and reduce the risk of load damage caused by an overcurrent condition. The OVP and OCP thresholds are adjustable by means of an external resistive divider.ConclusionWith its integrated ASIC, the HFA30PA60C-N3 device from STMicroelectronics provides a reliable and efficient solution for applications requiring high voltage isolation for switching and signal conditioning in applications such as motor control, DC-DC conversion and lighting. It offers high peak current capability, low on-state resistance and improved transient protection. It is particularly suitable for applications with high system cost sensitivity such as SMPS, VRMs, and DC-DC converters, automotive headlamps and industrial automation.

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