Allicdata Part #: | VS-HFA30PB120HN3-ND |
Manufacturer Part#: |
VS-HFA30PB120HN3 |
Price: | $ 7.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.2KV 30A TO247AC |
More Detail: | Diode Standard 1200V 30A Through Hole TO-247AC Mod... |
DataSheet: | VS-HFA30PB120HN3 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 6.48245 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 4.1V @ 30A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 170ns |
Current - Reverse Leakage @ Vr: | 40µA @ 1200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A diode is a semiconductor device that can conduct electricity only in one direction. It is an electronic component that helps turn electrical energy into functional power. It is one of the most fundamental electronic components and its use is widespread throughout circuits of all types. A solid-state diode is a two-terminal electronic device that blocks the flow of current in one direction while allowing current to flow in the other direction. The VS-HFA30PB120HN3 is a rectifier diode used primarily in circuit board designs requiring high-frequency power handling. It is a single diode that provides substantial current to the exact loads required for fast switching and a wide range of applications that demand power handling and reliability.
The VS-HFA30PB120HN3 is designed to provide quick switching time and smooth power transfer. The device is ideal for RF and high-frequency switching applications such as modems, switch and relay designs, and general switching circuits. It is a 30A Schottky Barrier rectifier that features an ultra low forward voltage drop and fast recovery current capabilities. The maximum operating temperature of the device is 175°C, and it has a peak reverse voltage of 1200V and a maximum average forward current of 30 amps. Its maximum surge forward current rating is 100 amps. The device is rated to withstand a pulse width of up to 10 microseconds, with a minimum pulse width rating of 20 nanoseconds.
The VS-HFA30PB120HN3 is constructed using Schottky diode technology, which enables it to provide exceptional power handling with minimal forward voltage drop. The device has a robust construction that is designed to withstand the high temperature and voltage levels encountered in high-frequency switching applications. The device is designed with a boost configuration that allows it to effectively transfer power from the input to the output with minimal losses. It can also handle up to 10mV of overvoltage without any damage.
The VS-HFA30PB120HN3 is an ideal choice for applications requiring high-frequency switching and is suitable for use in a variety of industries, including telecommunications, consumer electronics, automotive, industrial and medical. Its combination of high-current, high-precision, and low-voltage drop operation makes it an ideal solution for applications such as mobile phones, laptop computers, digital cameras, and gaming systems. Additionally, its low-loss characteristics, fast response time, and reliable power handling make it an ideal choice for use in high-temperature applications such as engine control systems and signal routing systems.
In summary, the VS-HFA30PB120HN3 is a single diode that provides quick switching time, reliable power handling, and low loss due to its Schottky Barrier design. It is an ideal solution for applications requiring high-frequency switching and is suitable for a variety of industries. Its combination of high-current, high-precision, and low-voltage drop operation make it an ideal choice for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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