Allicdata Part #: | MBR160TR-ND |
Manufacturer Part#: |
VS-MBR160TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 60V 1A DO204AL |
More Detail: | Diode Schottky 60V 1A Through Hole DO-204AL (DO-41... |
DataSheet: | VS-MBR160TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 750mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 60V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -40°C ~ 150°C |
Base Part Number: | MBR160 |
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The VS-MBR160TR is a single-phase silicon rectifier diode, designed for high efficiency and low reverse leak current with a forward surge current capability of 2 kWpeak. It is rated for continuous forward current up to 16 A and operation from -40 to +125 °C. It is commonly used in a variety of power converter applications including power factor correction, power inverters, electronic ballasts, and uninterruptible power supplies.
The appearance of the VS-MBR160TR can be seen in the following figure:
The VS-MBR160TR uses the Schottky barrier diode structure and has a low forward voltage drop of 0.3 V compared to the traditional silicon rectifier diodes.
The features of the VS-MBR160TR are as follows:
- High efficiency
- Low forward voltage drop
- Low reverse leakage current
- Fast switching speed
- High surge current capability
- Reliable operation
- Low thermal resistance
The working principle of the VS-MBR160TR is based on the forward biased Schottky barrier diode structure. It is a normal p-n junction diode but with a thin metal contact on the anode side of the diode. This thin metal contact reduces the forward voltage drop and creates a low resistance path between the anode and the cathode when the diode is forward biased. This allows the diode to switch quickly, which makes it suitable for fast switching applications such as switching power converters. The reverse bias capability of the VS-MBR160TR allows it to block reverse current, making it suitable for power applications where reverse current blocking is required.
The VS-MBR160TR has a variety of applications. One of the most common applications is in power factor correction (also known as active power factor correction). It is used to ensure that the input current and voltage are in phase, thus improving power-factor. The VS-MBR160TR is also widely used in power inverter applications, where it is used to switch currents quickly and efficiently. It can also be used in electronic ballasts and uninterruptible power supplies, where the diode is used to block reverse current and ensure reliable operation.
The VS-MBR160TR is an ideal diode for a variety of power conversion applications where reliability, efficiency, and switching speed are key requirements. Its low forward voltage drop, low reverse leakage current, and high surge current capability make it suitable for many high power applications, while its small package size and low thermal resistance make it ideal for high density applications.
The specific data is subject to PDF, and the above content is for reference
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