VS-MBR2035CTPBF Allicdata Electronics
Allicdata Part #:

MBR2035CTPBF-ND

Manufacturer Part#:

VS-MBR2035CTPBF

Price: $ 0.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 35V TO220AB
More Detail: Diode Array 1 Pair Common Cathode Schottky 35V 10A...
DataSheet: VS-MBR2035CTPBF datasheetVS-MBR2035CTPBF Datasheet/PDF
Quantity: 1000
1000 +: $ 0.63650
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Series: --
Packaging: Tube 
Part Status: Discontinued at Digi-Key
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 35V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: MBR2035CT
Description

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The VS-MBR2035CTPBF (“MBR2035") is a discrete, high voltage, fast-recovery rectifier array with an integrated protection MOSFET. It is categorized as an isolated array which means that each of its two diodes is electrically isolated from each other. It belongs in the larger category of rectifiers and specifically diodes rectifier arrays under which it is found.

Application Field

The dual element, monolithic die construction of the MBR2035 lends itself to various uses in modern devices. The rectifer array is intended for high voltage applications such as panel-backed rectification, secondary current rectification and voltage tuning, as well as high voltage power topologies such as Forward, Half-Bridge and Push-Pull. Furthermore, due to its small size, the MBR2035CTPBF is ideal for use in electronic equipment such as set-top boxes, PCs, servers, motor systems and other consumer electronics.

Working Principle

The device is comprised of two independent p- and n-channel MOSFETs acting as protective elements and two Diodes. The diodes have a high voltage rating (up to 20V) and fast recovery distances and duration. The p- and n-channel MOSFETs contribute to the enhanced safe-operating-area (SOA) and reduce on-state resistance of the diode.The two diodes of the device can be thought of as two individual setup of a single p-n junction diode. In normal operation, the two diodes act as a parallel connection for the circuit providing a low-voltage drop with high current handling capabilities. The isolation between the two diodes and the MOSFETs provides added protection from voltage spikes and protects against possible shorts that might occur from overvoltage condition.

The integrated protection MOSFET helps prevent short circuit failure and reduces Electro-Magnetic Interference (EMI). It also reduces the amount of energy required to activate the diode, resulting in higher efficiency. With improved efficiency and protection capabilities, the MBR2035CTPBF helps ensure the circuit’s continued functioning and longevity.

Conclusion

Overall, the VS-MBR2035CTPBF is an ideal choice for high voltage applications that require efficient, highly reliable, and low power consumption. It is designed with a dual element, monolithic die construction which contributes to its efficient performance and increase protection capability. As a rectifier array, it can be used in a variety of electronic devices, including set-top boxes, PCs, servers, motor systems, and other consumer electronics. Furthermore, the fast-recovery, low-voltage drop, and enhanced safe-operating-area (SOA) make the MBR2035 a reliable and efficient solution for high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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