VS-MBR2090CT-N3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	90V
Current - Average Rectified (Io) (per Diode):	10A
Voltage - Forward (Vf) (Max) @ If:	800mV @ 10A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 90V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Introduction

VS-MBR2090CT-N3 is a Silicon Controlled Rectifier (SCR) array integrated circuit (IC). SCR arrays are advanced semiconductor devices that are used in a variety of applications such as power management, motor control, and sensing. This article seeks to discuss the application field and working principle of the VS-MBR2090CT-N3.

Application Field

The VS-MBR2090CT-N3 SCR array is a popular choice for use in several different applications, particularly those that require high power control capabilities. It is used in power management applications, as it can easily switch and regulate large amounts of electrical energy, in addition to providing protection against voltage spikes, current surges and EMI. It is also used in motor control applications such as HVAC, automotive, and industrial control systems, where fast and accurate voltage and current control is required. In addition, the VS-MBR2090CT-N3 is used for sensing applications in communication and detection systems. Specifically, its low on-state voltage drop and low power dissipation has rendered it a great choice for sensing applications in which thermal management is critical. More generally, the VS-MBR2090CT-N3 is ideal for industries seeking to reduce their power consumption, as its phase controlling capability enables it to act as an efficient transistor switch.

Working Principle

The VS-MBR2090CT-N3 SCR array works by controlling the conduction and switching of electrical current. It has 2 sets of 3 terminals, one of which acts as the gate, while the others serve as main terminals. The main terminals are connected to the source and load, with the current flowing through them. When the voltage drop between the gate and main terminals crosses the device’s breakdown voltage, a current travels through the gate and the device switches on. When this happpens, the voltage between the main terminals will be close to 0V, enabling current to flow freely. To switch off the device, the gate must be brought back to the ground potential.

Conclusion

The VS-MBR2090CT-N3 silicon controlled rectifier is a versatile device used in a wide range of applications, primarily for power management purposes. It works by controlling the conduction and switching of electrical current between its 2 sets of 3 terminals. It is capable of managing large amounts of electrical energy, operating with a low on-state voltage drop and low power dissipation. All these factors make it a popular choice in the market for industries seeking to reduce power consumption.

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