| Allicdata Part #: | VS-MBRB2080CTLHM3-ND |
| Manufacturer Part#: |
VS-MBRB2080CTLHM3 |
| Price: | $ 0.71 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE SCHOTTKY 80V 10A D2PAK |
| More Detail: | Diode Array 1 Pair Common Cathode Schottky 80V 10A... |
| DataSheet: | VS-MBRB2080CTLHM3 Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.63588 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tube |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 80V |
| Current - Average Rectified (Io) (per Diode): | 10A |
| Voltage - Forward (Vf) (Max) @ If: | 800mV @ 10A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 100µA @ 80V |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
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Diodes - Rectifiers - Arrays is a broad category that can encompass many types of electronic components. One type of component within this grouping is the VS-MBRB2080CTLHM3. This electronic component is designed for use in both high power switching and high power rectifying applications. In this article, the application field and working principle of the VS-MBRB2080CTLHM3 will be explored.
The VS-MBRB2080CTLHM3 is designed for use in extremely high power switching applications. In order to meet the demands of these applications, the VS-MBRB2080CTLHM3 is constructed with a specialized triple-stack technology. This technology allows for three separate levels of transistors to be stacked in a single package, reducing the overall size of the component while still providing significant switching power levels. Furthermore, this component is equipped with a wide temperature range, allowing it to be used in high temperature environments.
In addition to its use in high power switching, the VS-MBRB2080CTLHM3 is also designed for use in high power rectifying applications. For such applications, this component is constructed with an optimized Schottky diode configuration. This configuration is designed to provide an extremely low forward voltage drop, allowing for a high power density. Furthermore, the component offers a low reverse leakage current, providing improved efficiency overall.
The working principle of the VS-MBRB2080CTLHM3 is based on the use of two different technologies. The first technology is the triple-stack technology, which provides three layers of transistors and ensures a high switching power level. The second technology is the optimized Schottky diode configuration, which allows for a low forward voltage drop as well as improved power efficiency. The combination of these two technologies allows the VS-MBRB2080CTLHM3 to be used in both high power switching and high power rectifying applications.
In conclusion, the VS-MBRB2080CTLHM3 is a specialized electronic component that is designed for use in both high power switching and high power rectifying applications. The component is constructed with a unique triple-stack technology and an optimized Schottky diode configuration. These two technologies provide the component with high switching power and a low forward voltage, allowing it to be used in a variety of applications. As a result, the VS-MBRB2080CTLHM3 is a valuable and reliable electronic component for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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VS-MBRB2080CTLHM3 Datasheet/PDF