VS-MBRB735TRLPBF Allicdata Electronics
Allicdata Part #:

VS-MBRB735TRLPBF-ND

Manufacturer Part#:

VS-MBRB735TRLPBF

Price: $ 0.47
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 35V 7.5A D2PAK
More Detail: Diode Schottky 35V 7.5A Surface Mount D2PAK
DataSheet: VS-MBRB735TRLPBF datasheetVS-MBRB735TRLPBF Datasheet/PDF
Quantity: 1000
800 +: $ 0.42494
Stock 1000Can Ship Immediately
$ 0.47
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: MBRB735
Description

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The VS-MBRB735TRLPBF is a popular single-phase rectifier diode, designed to handle high current applications, such as those found in air conditioners, motors and generators. It has a very low forward voltage of 0.38V, making it ideal for high current applications.

The device is constructed from a high conductivity silicon, and comes with a blocking voltage rating of 700V. Its maximum continuous repetitive reverse voltage is also 700V. It has a low thermal resistance, meaning that it can operate in all kinds of different environments and still provide good efficiency.

The device comes in a small in-line plastic (UL-94V-0) package with the dimensions of 6.9 x 4.7 x 2.3mm. The device has a typical junction capacitance of 1.11pF, meaning that it can handle very high frequency applications without losing efficiency.

One of the most attractive features of this diode is its exceptional surge forward current capability. It can handle up to 11A, making it ideal for high current applications. This also makes it suitable for SMPS (switch-mode power supplies) applications.

The device is designed to work in environments with temperatures ranging from -55°C to 125°C. It has a low dissipation factor, making it suitable for high frequency applications.

The VS-MBRB735TRLPBF’s working principle is based on the P-N junction, which has a potential difference between the N-type and P-type doped layers. When the PN junction is forward biased, the electrons from the n-side recombines with the holes from the p-side and create a low resistance path for current flow. This allows for current to flow from the anode to the cathode.

The device is designed to bridge AC/DC circuits. It has a fast switching rate, meaning that it can be used in DC/DC switch mode power supplies. It can also be used in radio frequency amplifiers and switching circuits. It is a very versatile device and can be used in many different applications.

The VS-MBRB735TRLPBF is a great choice for a variety of applications, including switching power supplies, rectifiers and microwave amplifiers. Its fast switching rate and high current capability means that it is ideal for high-current applications. Its low forward voltage and thermal resistance makes it suitable for use in high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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