VS-MBRS130-M3/5BT Allicdata Electronics
Allicdata Part #:

VS-MBRS130-M3/5BT-ND

Manufacturer Part#:

VS-MBRS130-M3/5BT

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 30V 1A SMB
More Detail: Diode Schottky 30V 1A Surface Mount SMB (DO-214AA)
DataSheet: VS-MBRS130-M3/5BT datasheetVS-MBRS130-M3/5BT Datasheet/PDF
Quantity: 1000
3200 +: $ 0.06636
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 125°C
Description

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The VS-MBRS130-M3/5BT is a high-powered single rectifier diode. It is a Schottky barrier power rectifier ideal for use in low voltage applications such as power management and automotive applications. The rectifier has a current rating of 130A and a voltage rating of 30V and can handle a peak reverse voltage up to 300V. This diode has a low forward voltage drop, which helps reduce power loss and can help improve system efficiency. It also has a low reverse leakage current and the ability to operate at high temperatures, making it suitable for a variety of applications.

The VS-MBRS130-M3/5BT is a high-efficiency rectifier diode that is optimized for use in low-voltage applications. It is capable of operating at temperatures up to 150°C and delivering high-power performance. The device is supplied in a very small package, making it ideal for use in space-constrained applications. The device has a low forward voltage drop, making it an efficient power source. It is designed to be used in various applications such as power management and automotive electronics. The rectifier has a peak current rating of 130A and can handle a peak reverse voltage up to 300V.

The working principle of a rectifier diode is based on the PN junction. A PN junction is made up of a silicon diode with two layers of charge carriers – P type and N type – on either side of the junction. When a voltage is applied across the junction, the P type layer attracts electrons and the N type layer repels them. This creates an electric field that allows current to flow across the junction in one direction only. As a result, the forward current increases, blocking the reverse current, and the diode operates as a rectifier.

The VS-MBRS130-M3/5BT is a versatile diode that can be used in a variety of applications. It is suitable for use in automotive electronics, power management, and other low-voltage applications. The diode has a low forward voltage drop and a high temperature rating, allowing it to operate efficiently in a variety of conditions. The device also has a low reverse leakage current which helps to increase system efficiency. The rectifier has a peak current rating of 130A and can handle a peak reverse voltage up to 300V.

The VS-MBRS130-M3/5BT is a high-efficiency rectifier diode designed for use in low-voltage applications. It is capable of operating at temperatures up to 150°C and delivering high-power performance. The device is supplied in a very small package, making it ideal for use in space-constrained applications. The device has a low forward voltage drop, making it an efficient power source. It is designed to be used in various applications such as power management and automotive electronics, and meets the requirements of the semiconductor industry’s robust design process.

The specific data is subject to PDF, and the above content is for reference

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