VS-MBRS130TRPBF Discrete Semiconductor Products |
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| Allicdata Part #: | VS-MBRS130TRPBFTR-ND |
| Manufacturer Part#: |
VS-MBRS130TRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE SCHOTTKY 30V 1A SMB |
| More Detail: | Diode Schottky 30V 1A Surface Mount SMB |
| DataSheet: | VS-MBRS130TRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 30V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 420mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 1mA @ 30V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | SMB |
| Operating Temperature - Junction: | -55°C ~ 125°C |
| Base Part Number: | MBRS130 |
Description
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The VS-MBRS130TRPBF diode is the industry-leading product from Vishay, an international corporation that produces electronic components and solutions. Known for superior performance, the VS-MBRS130TRPBF is an ultrafast rectifier diode with a reverse voltage of 13A and a peak forward surge current of 130A. It is one of the most versatile rectifier diodes available and is used in a variety of applications. This article will discuss the application fields and working principle of the diode.
The VS-MBRS130TRPBF is designed for a wide range of applications. It is often used in switching power supplies, such as those used in computers, monitors and laptops. It can also be used in power rectifier or voltage stabilizer circuits, flyback converters in television sets, inverters and motor controls, DC/DC conversion systems, and as an inductive element in motors. It is also suitable for high-efficiency rectification of medium and high voltage applications, such as in solar cells and electric vehicles.
The VS-MBRS130TRPBF has a low forward-voltage drop and low reverse-recovery time that make it an ideal choice for high-frequency applications. It is also highly capable of ESD (electrostatic discharge) protection, making it suitable for mobile and other applications where ESD could cause a problem. The diode is often employed in low-voltage power supplies and features superior reverse recovery characteristics and efficient thermal performance. The device also exhibits excellent surge current handling ability and is able to withstand reverse voltages of up to 13A.
The working principle of the VS-MBRS130TRPBF is based on a silicon junction rectifier configuration. The diode consists of two PN-junction diodes connected in series with the anode and cathode of the diode connecting to the two ends of the junction. When a forward-biased electric field is applied to the junction, positive charge flow from the anode to the cathode, and the diode “turns on”. When a reverse bias voltage is applied, the diode “turns off”, and no current passes across the junction. It is this principle that enables the device to act as an electrode and produce power.
In conclusion, the VS-MBRS130TRPBF is a versatile, high-performance diode with a wide range of applications. It is designed to handle a variety of voltage and current requirements and is well-suited for ESD protection. The diode has excellent thermal performance with low forward-voltage drops and reverse recovery times. Finally, its working principle is based on the silicon junction rectifier configuration, which enables it to act as an electrode and produce power.
The specific data is subject to PDF, and the above content is for reference
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VS-MBRS130TRPBF Datasheet/PDF