Allicdata Part #: | VS-MURB1620CT-1-M3-ND |
Manufacturer Part#: |
VS-MURB1620CT-1-M3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 200V 8A TO262 |
More Detail: | Diode Array 1 Pair Common Cathode Standard 200V 8A... |
DataSheet: | VS-MURB1620CT-1-M3 Datasheet/PDF |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Series: | FRED Pt® |
Part Status: | Preliminary |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 975mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Operating Temperature - Junction: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262AA |
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Diodes - Rectifiers - Arrays
The VS-MURB1620CT-1-M3 is an optimized solution for power management applications. It is a diode-rectifier array which is capable of handling a wide range of operating voltages and frequencies. The device can be used for input protection, power line protection, DC-DC conversions and voltage regulation.
Application Field of VS-MURB1620CT-1-M3
The VS-MURB1620CT-1-M3 is designed for a variety of low-voltage applications requiring cost-effective solutions, such as in 24V DC/AC power supplies, telecoms, lighting systems, computers and many more. The diodes in the array, made from ultrafast silicon semiconductor material, provide an efficient way of completing circuit paths in rapid succession. The VS-MURB1620CT-1-M3 is suitable for digital, analog and mixed analog/digital applications in a variety of industries.
The device has an operating voltage range of 40V-300V with a forward voltage drop of 1.2V maximum. It offers very low leakage current, which helps to extend battery life, and high temperature operation of up to 200°C.
The VS-MURB1620CT-1-M3 also features fast reverse recovery time (trr) and high avalanche energy capability, making it ideal for a wide range of applications.
Working Principle of VS-MURB1620CT-1-M3
The VS-MURB1620CT-1-M3 uses an array of 4 diodes to rapidly turn a voltage supply on and off at high speed. The diodes are arranged in a series-parallel configuration that provides the fast switching performance. The diode material is composed of an ultrafast silicon semiconductor that quickly responds to changes in voltage and current, allowing for the quick turn-on and turn-off of the supply.
When a positive voltage is applied to the device, the diodes turn on, allowing current to flow. When the voltage is reversed, the diodes quickly turn off and cut off the current. This fast response time makes the array an ideal solution for applications requiring an instantaneous response.
One of the main advantages of the VS-MURB1620CT-1-M3 is its low leakage current. This helps to reduce power consumption and extend battery life in portable and battery-operated devices. The device also features high temperature operation and fast recovery time, making it well-suited for a variety of power management applications.
The VS-MURB1620CT-1-M3 is an ideal choice for power management applications in a variety of industrial, commercial, and consumer applications.
It is an easy to use, cost-effective solution that provides superior performance and reliability. With its wide operating voltage range, low leakage current, high temperature operation, and fast recovery time, the VS-MURB1620CT-1-M3 is an excellent solution for power management applications.
The specific data is subject to PDF, and the above content is for reference
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