VS-MURB820TRRHM3 Allicdata Electronics
Allicdata Part #:

VS-MURB820TRRHM3-ND

Manufacturer Part#:

VS-MURB820TRRHM3

Price: $ 0.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 8A TO263
More Detail: Diode Standard 200V 8A Surface Mount TO-263 (D2Pak...
DataSheet: VS-MURB820TRRHM3 datasheetVS-MURB820TRRHM3 Datasheet/PDF
Quantity: 1000
800 +: $ 0.50274
Stock 1000Can Ship Immediately
$ 0.56
Specifications
Series: Automotive, AEC-Q101, FRED Pt®
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Introduction

A diode rectifier is an electronic device used in electronic circuits to convert alternating current (AC) electrical power to direct current (DC) electrical power. The VS-MURB820TRRHM3 is a single diode rectifier, with an optimized circuit design suitable for a range of applications. In this article, we will discuss the application field and working principle of the VS-MURB820TRRHM3.

Application Field

The VS-MURB820TRRHM3 is suitable for applications such as television, computer monitor and stereo power supplies, as well as commercial and industrial power supplies. It is designed to be used in automotive and other transportation applications, and is specified by the Automotive Electronics Council (AEC). The VS-MURB820TRRHM3 is an automotive-grade diode rectifier, rated to AEC-Q101-002, and can provide superior performance in automotive and non-automotive power supply applications.

Working Principle

The VS-MURB820TRRHM3 is a single diode rectifier, and is composed of a thicker silicon die with a metalization layer and a dielectric layer. A thicker die is used to reduce the on-state resistance and to increase the current density of the diode. The metalization layer is used to reduce the parasitic capacitance, and the dielectric layer is used to reduce the junction capacitance.

The working principle of the VS-MURB820TRRHM3 is based on the PN junction. When a voltage is applied to the PN junction, an electric field is created across the junction, which allows current to flow through the diode. The current will flow in one direction only, and is blocked when the applied voltage is reversed. When the voltage across the diode is below its forward voltage, the diode is said to be in a blocking state and no current can flow.

The VS-MURB820TRRHM3 has a low forward voltage drop and high forward surge voltage. These ensure that the diode is able to regulate the AC to a DC output, while also preventing high transient currents which can result in damage to other components in the circuit.

Conclusion

The VS-MURB820TRRHM3 is a single diode rectifier, and is suitable for many applications. It is rated by the AEC for automotive applications, and also offers superior performance in commercial and industrial power supplies. Its working principle is based on the PN junction, and it has a low forward voltage drop and high forward surge voltage.

The VS-MURB820TRRHM3 has been designed with an optimized circuit design suitable for a variety of applications. It is a reliable solution for the conversion of AC electrical power to DC power, and is widely used in consumer and industrial electronics.

The specific data is subject to PDF, and the above content is for reference

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