Allicdata Part #: | VS-SD253N16S20PSC-ND |
Manufacturer Part#: |
VS-SD253N16S20PSC |
Price: | $ 57.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GP 1.6KV 250A DO205AC |
More Detail: | Diode Standard 1600V 250A Chassis, Stud Mount DO-2... |
DataSheet: | VS-SD253N16S20PSC Datasheet/PDF |
Quantity: | 1000 |
12 +: | $ 51.33920 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1600V |
Current - Average Rectified (Io): | 250A |
Voltage - Forward (Vf) (Max) @ If: | 1.38V @ 785A |
Speed: | Fast Recovery = 200mA (Io) |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-205AC, DO-30, Stud |
Supplier Device Package: | DO-205AC (DO-30) |
Operating Temperature - Junction: | -40°C ~ 125°C |
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VS-SD253N16S20PSC is a parameter-optimized medium power Dual Diode Module from Vishay Semiconductor, suitable for low-frequency switching universal input with a maximum Voltage of 1600V, and a rated current of 8A with a footprint of 15x41mm. It is widely used in the field of medium to high voltage diodes, such as in AC adapters, low-frequency inverters, solar and wind power inverters, motor drives, etc., where its remarkable flexibility makes it an ideal choice for many applications.
To properly operate, the VS-SD253N16S20PSC module requires a VDRM (peak repetitive reverse voltage) of 1600V with a VRRM (off-state peak reverse voltage) of a minimum of 1000V and a VOSS (off-state peak symmetrical voltage) of up to 800V. When the device is subjected to ambient temperatures ranging from -55°C to 150°C, the IFSM (non-repetitive on-state surge current) should be specified (in Amps) above 400A.
The basic operating principle of the VS-SD253N16S20PSC is based on the movement of free electrons, which are constantly moving from the n-type semiconductor diode to the p-type semiconductor diode. When the voltage applied to the diode is greater than the amount of voltage it will allow electrons to cross, the device creates a barrier that prevents the movement of electrons, so that current is not allowed to flow through the device. The direction of the voltage applied will determine the direction of the flow of the electrons.
The device is configured in an asymmetrical double diode configuration and is ideal for applications with low-frequency switching across a wide range of temperatures as mentioned above. The Dual-Diode Module VS-SD253N16S20PSC also incorporates an integral restrictor, which will limit the avalanche current and therefore, reduces the system pressure and stress. This product provides soft, fast recovery and improved immunity against electronic noise.
The device features high surge capability, high efficiency, low power dissipation, and minimal self-heating, making them a cost-efficient and reliable solution for high-temperature diode applications. The device also provides higher reverse leakage for a given number of cycles; thus allowing for reliable operation and significantly reduced thermal stress.
The wide range of temperature and operating conditions, combined with the features outlined above, makes the VS-SD253N16S20PSC module suitable for a variety of applications. The Dual Diode Module has been widely used in AC adapters such as mobile phone chargers, low-frequency inverters, solar and wind power inverters, motor drives, and many other applications.
VS-SD253N16S20PSC dual diode module is a reliable and cost-effective solution when compared to traditional designs. Not only is the double diode feature ideal for low-frequency switching and temperature power conversion, but the ability to effectively handle high voltage makes it ideal for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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