VS-SD600N16PC

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Introduction

VS-SD600N16PC is a device from Infineon Technologies AG and is a highly integrated, ultra-low voltage Schottky diode, rectifier and Schottky LFPAK MOSFET integrated power device in a single package. It offers the convenience, reliability and efficiency of discrete rectifier and MOSFET solutions. This device combines a Schottky Diode with an integrated Ultra Low RDSon dual N-channel MOSFET in a LFPAK package.

Application Field

VS-SD600N16PC is particularly suitable for synchronous rectified isolated and low voltage VR12.0VIFX motherboards, and can be used as a compact and efficient solution for AC/DC or DC/DC power applications. It is available in a 7x7mm LFPAK package, which is smaller and less expensive than normal discrete solutions, and provides high power density. It also makes design easier, reduces the number of components, saves board space, and reduces system cost. It has an operating temperature range of –40°C ~ 125°C, and can withstand up to 6A continuous output current.

Working Principle

The VS-SD600N16PC operates as a Schottky rectifier combined with an integrated N-channel MOSFET, based on the same principle as a conventional Schottky rectifier. In addition, the integrated MOSFET circuit provides excellent ESR performance and higher current carrying capability.

The device features a low forward voltage drop, typically less than 0.2V, which increases efficiency; a low reverse leakage current of less than 0.25μA, which ensures low power dissipation; a high frequency of up to 1.1MHz, which reduces ripple current; and a low resistance of 0.11mΩ, which reduces conduction losses. All this combines to provide an optimal balance between efficiency and cost. The device also provides protection against over current, over voltage, and short circuit.

Advantages of VS-SD600N16PC

• Small form factor
• High power density
• Low forward voltage drop
• Low reverse leakage current
• High frequency operation
• Low resistance
• Integrated protection features

Conclusion

VS-SD600N16PC from Infineon Technologies AG is an ideal solution for AC/DC or DC/DC power applications. It is a highly integrated device that combines a Schottky Diode with an integrated Ultra Low RDSon dual N-channel MOSFET in a LFPAK package, and provides high power densitiy and superior performance. The device provides protection against over current, over voltage, and short circuit, and has excellent efficiency and reliability in a compact form factor.

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