Allicdata Part #: | VS-ST103S08PFN1P-ND |
Manufacturer Part#: |
VS-ST103S08PFN1P |
Price: | $ 51.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | SCR 800V 165A TO-94 |
More Detail: | SCR 800V 165A Standard Recovery Chassis, Stud Moun... |
DataSheet: | VS-ST103S08PFN1P Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 46.70110 |
Specifications
Current - On State (It (RMS)) (Max): | 165A |
Supplier Device Package: | TO-209AC (TO-94) |
Package / Case: | TO-209AC, TO-94-4, Stud |
Mounting Type: | Chassis, Stud Mount |
Operating Temperature: | -40°C ~ 125°C |
SCR Type: | Standard Recovery |
Current - Non Rep. Surge 50, 60Hz (Itsm): | 2530A, 2650A |
Current - Off State (Max): | 30mA |
Current - Hold (Ih) (Max): | 600mA |
Series: | -- |
Current - On State (It (AV)) (Max): | 105A |
Voltage - On State (Vtm) (Max): | 1.73V |
Current - Gate Trigger (Igt) (Max): | 200mA |
Voltage - Gate Trigger (Vgt) (Max): | 3V |
Voltage - Off State: | 800V |
Part Status: | Active |
Packaging: | Bulk |
Description
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Thyristors - SCRs Thyristors are a type of semiconductor device that consists of three or four alternately connected p-n junctions. They are used in a wide range of applications including power control, actuating circuits, protection circuits, voltage regulation and control. The most common thyristor is the Silicon Controlled Rectifier (SCR), which consists of three p-n junctions and can be used to regulate power. SCRs are often used in industrial and consumer equipment, such as motor control, switching systems, energy management and automation systems.The VS-ST103S08PFN1P is a type of SCR that is suitable for controlling the power supply of various electronic devices. It is an integrated semiconductor device that contains a three-layer active gate structure. This gate structure is composed of a Gate-Drain region, a Gate-Source region, and a Gate-Source-Drain junction. It has a voltage rating of 20A and 25V, with an operating temperature range of -40C to +125C.The VS-ST103S08PFN1P offers a variety of features and functions. It features a low-forward voltage drop and a low inverse voltage, making it suitable for high-efficiency applications. Its reverse recovery time is also low, helping to minimize power loss. The gate-source-drain junction also helps to improve the switching capability, making it suitable for use in a wide range of applications.The working principle of the VS-ST103S08PFN1P is similar to other SCRs. Its gate acts as a signal input for controlling the current in the main and secondary branches. When the gate signal is high, the thyristor is in a "forward blocking" state, which prevents the current from flowing. When the gate signal is low, the thyristor is in a "forward conduction" state, which allows the current to flow from the main branch to the secondary branch. This makes it possible to control the voltage and current in the circuit.The VS-ST103S08PFN1P is most often used for power control applications, such as motor control and switching systems. It is also used for energy management and automation. In addition, it can be used in power supplies, rectifiers, inverters, and more.The VS-ST103S08PFN1P is a versatile device that can be used in a variety of applications. Its low forward voltage drop and low inverse voltage make it suitable for high-efficiency applications. Its reverse recovery time is also low, helping to minimize power loss. The integrated gate structure improves the switching capability while providing protection against overloads. It can be used in a wide range of applications, making it a reliable and efficient solution for power control.
The specific data is subject to PDF, and the above content is for reference
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