VS-ST1200C12K0P Allicdata Electronics
Allicdata Part #:

VS-ST1200C12K0P-ND

Manufacturer Part#:

VS-ST1200C12K0P

Price: $ 180.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: SCR 1200V 3080A K-PUK
More Detail: SCR 1.2kV 3080A Standard Recovery Chassis Mount A-...
DataSheet: VS-ST1200C12K0P datasheetVS-ST1200C12K0P Datasheet/PDF
Quantity: 1000
2 +: $ 163.98000
Stock 1000Can Ship Immediately
$ 180.38
Specifications
Current - On State (It (RMS)) (Max): 3080A
Supplier Device Package: A-24 (K-Puk)
Package / Case: TO-200AC, K-PUK, A-24
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 25700A, 26900A
Current - Off State (Max): 100mA
Current - Hold (Ih) (Max): 600mA
Series: --
Current - On State (It (AV)) (Max): 1650A
Voltage - On State (Vtm) (Max): 1.73V
Current - Gate Trigger (Igt) (Max): 200mA
Voltage - Gate Trigger (Vgt) (Max): 3V
Voltage - Off State: 1.2kV
Part Status: Active
Packaging: Bulk 
Description

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Thyristors – SCRs (silicon-controlled rectifiers) are widely used in a range of power electronic applications and act as a controllable switch in power control circuits. The VS-ST1200C12K0P is one such SCR which can be used in various applications and provides a variety of features with superior performance.

The VS-ST1200C12K0P is a fast-switching and highly efficient SCR designed for medium to high-power applications. It utilizes an enhanced Silicon-On-Sapphire (SOS) technology for superior performance, reliability, and stability. The Ceramic-Metal package ensures superior thermal performance and heat dissipation. The SCR features an ultra-low on-state voltage drop of 0.52V, a low gate-charge rating of 1.8nC, and a fast switching time of 180ns. It is capable of operating at a high temperature of 120˚C with a superior thermal resistance of 1.9K/W and can handle up to 15A of current.

The working principle of the VS-ST1200C12K0P is based on the PNPN four-layer structure. It consists of individual layers of P-type and N-type doped semiconductor silicon which form a pair of connected rectifying sections. The two sections are known as the anode, cathode, and gate. The junction of the anode and cathode is responsible for the rectifying nature of the SCR enabling it to act as a switch when sufficient voltage or current is applied. When a current is applied to the gate, it enters the SCR, and the charge carriers are able to recombine the N-type and P-type regions which in turn adds a flow of current between the anode and cathode, i.e. turn on the SCR. The SCR remains in the on state until the current in the gate is removed or a reverse current is applied to the anode and cathode.

The VS-ST1200C12K0P can be used in a variety of applications requiring fast switching and high-power capabilities. It is suitable for motor controls, switch-mode power supplies, power factor controllers, static relays, automated test equipment, and circuit protection applications. It is also suitable for AC drives, high-efficiency energy-saving systems, and over-voltage protection.

The VS-ST1200C12K0P is a highly efficient and fast-switching Thyristor – SCR designed for medium to high-power applications with superior thermal performance. Its PNPN structure allows it to act as a switch when sufficient voltage or current is applied and it can be used in a variety of applications requiring fast switching and high-power capabilities. The Ceramic-Metal package ensures superior thermal performance and heat dissipation making it a reliable and robust solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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