VS-ST1230C12K0L Allicdata Electronics
Allicdata Part #:

VS-ST1230C12K0L-ND

Manufacturer Part#:

VS-ST1230C12K0L

Price: $ 242.82
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: SCR 1200V 3200A K-PUK
More Detail: SCR 1.2kV 3200A Standard Recovery Chassis Mount A-...
DataSheet: VS-ST1230C12K0L datasheetVS-ST1230C12K0L Datasheet/PDF
Quantity: 1000
2 +: $ 220.74200
Stock 1000Can Ship Immediately
$ 242.82
Specifications
Current - On State (It (RMS)) (Max): 3200A
Supplier Device Package: A-24 (K-Puk)
Package / Case: TO-200AC, K-PUK, A-24
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 28200A, 29500A
Current - Off State (Max): 100mA
Current - Hold (Ih) (Max): 600mA
Series: --
Current - On State (It (AV)) (Max): 1745A
Voltage - On State (Vtm) (Max): 1.62V
Current - Gate Trigger (Igt) (Max): 200mA
Voltage - Gate Trigger (Vgt) (Max): 3V
Voltage - Off State: 1.2kV
Part Status: Active
Packaging: Bulk 
Description

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Thyristors - SCRsA silicon-controlled rectifier, more commonly known as a thyristor, is a device that is used to control current or voltage in electronic circuits. The VS-ST1230C12K0L thyristor is a high-power triode thyristor, featuring a 12KV DC current rating, a low damping factor and reliable quality performance. It is used for electro-mechanical and power control applications in power systems and industrial controls.There are two main types of thyristors: four-layer thyristors and two-layer thyristors. The basic structure of the VS-ST1230C12K0L is that of a four-layer thyristor, consisting of four layers of semiconductor material, each with its own doping concentration. The inner layers are typically an N-type and P-type material, while the outer layers are typically a N-type and P-type material. In the VS-ST1230C12K0L, the inner layers are P-type, while the outer layers are N-type. When the VS-ST1230C12K0L thyristor is subjected to a positive voltage, the positive charge travels across the internal structure of the device, creating a pathway between the anode and the cathode. The positive charge then enters the anode which is the starting point for conduction. The anode and the cathode are connected by a semiconductor layer, known as the gate region, which acts as an electrical switch to control the current flow from the anode to the cathode.The main application of the VS-ST1230C12K0L thyristor is as an electronic switch for power electronics. It can be used in power circuits for controlling high voltage and power for a variety of applications, such as shut-off equipment, solar energy equipment, DC to AC converters and motors. Its low damping factor makes it suitable for power control applications such as motor drives, power converters and lighting control.The working principle of the VS-ST1230C12K0L thyristor is relatively simple. When a positive voltage is applied, the anode and the cathode are connected by the gate region, allowing a flow of current. The control is done using a gate signal, where a positive voltage allows a greater flow of current. Conversely, a negative voltage reduces the flow of current. The amount of current that can flow through the thyristor is limited by its maximum rated current.In conclusion, the VS-ST1230C12K0L thyristor is a high power, reliable and versatile four-layer thyristor. It is used for various power control applications and offers a low damping factor, allowing for more precise power control. The working principle of the VS-ST1230C12K0L is relatively simple and can be controlled using a gate signal to adjust the flow of current.

The specific data is subject to PDF, and the above content is for reference

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