VS-UFB211FA40

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The VS-UFB211FA40 is a high power diode array for not only controlling power supply-induced EMI (electromagnetic interference) but also high speed switching applications. This semiconductor device belongs to the family of diodes and rectifiers that are used to convert alternating current (AC) to direct current (DC).

The VS-UFB211FA40 is mainly used in 400V/1000V high speed IGBT (Insulated Gate Bipolar Transistor) and power supply circuit applications to prevent interference and limit the rate of rise of inductive loads. Also, it can be used in wide range of applications such as power distributors, rectifiers, isolators and inductive loads.

As far as technical parameters are concerned, the VS-UFB211FA40 has an average forward current of 16A, a forward voltage of 0.41V, and a maximum forward surge current of 250A. Additionally, the junction temperature range is from -55 to +150 degrees Celsius and its ambient temperature range is from -55 to +85 degrees Celsius.

The VS-UFB211FA40 has excellent linearity and a low voltage drop between conducting and non-conducting states. This enables it to switch off the IGBT or the thyristor quickly, thereby reducing the switching losses or conduction losses. Moreover, it has a low forward voltage and a fast response time, which enable it to operate even at a high frequency of up to 50kHz.

The working principle of the VS-UFB211FA40 is that it is designed to be shorted in parallel. The device will then be normally connecting during the initial forward current and will break during a leading edge ring current application. The device will then disconnect when the reverse recovery current of the body diode increases to the rated value. Additionally, the VS-UFB211FA40 features a fast frequency capability, an excellent linearity, and a low voltage drop.

To sum up, the VS-UFB211FA40 is a high power diode array that is used in 400V/1000V high speed IGBT and power supply circuit applications. It has a fast frequency capability, an excellent linearity, and a low voltage drop. Additionally, it has an average forward current of 16A, a forward voltage of 0.41V and a maximum forward surge current of 250A. Furthermore, it has junction temperature range of -55 to +150 degrees Celsius and an ambient temperature range of -55 to +85 degrees Celsius. This makes it an ideal choice for high speed switching and power supply-induced EMI applications.

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