VS-VSKE270-12PBF Allicdata Electronics
Allicdata Part #:

VS-VSKE270-12PBF-ND

Manufacturer Part#:

VS-VSKE270-12PBF

Price: $ 98.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GP 1.2KV 270A MAGNAPAK
More Detail: Diode Standard 1200V 270A Chassis Mount MAGN-A-PAK...
DataSheet: VS-VSKE270-12PBF datasheetVS-VSKE270-12PBF Datasheet/PDF
Quantity: 1000
2 +: $ 88.97490
Stock 1000Can Ship Immediately
$ 98.86
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 270A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50mA @ 1200V
Capacitance @ Vr, F: --
Mounting Type: Chassis Mount
Package / Case: 3-MAGN-A-PAK™
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Description

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Diodes - Rectifiers - Single

VS-VSKE270-12PBF is an ultrafast recovery rectifier diode developed to increase performance of power supplies and other equipment. VS-VSKE270-12PBF devices offer world-class ultrafast reverse and recovery times, low forward voltage, low capacitance and very low leakage current. Available in DO-214AA packages, they are suitable for use in high current, high frequency applications with EMI interference suppression.

VS-VSKE270-12PBF rectifier diodes are used in applications such as power supplies, UPS systems, solar cell array panels, switched capacitor networks, electrical motor drives and other switching power supplies. By utilizing its ultrafast recovery time and low forward voltage, the device is able to provide improved efficiency and better performance in current applications compared to other rectifier diodes. The low capacitance also helps reduce EMI interference in these applications.

The operating principle of the VS-VSKE270-12PBF rectifier diode is based on the movement of electrons across a P-N junction. When a forward bias is applied to the diode, electrons are injected from the N-type material into the P-type material, creating a current flow. When a reverse bias is applied to the diode, the current flow is blocked, restricting the flow of electrons across the P-N junction.

When the potential difference across the P-N junction reaches the breakdown voltage, the junction becomes forward biased and current begins to flow. The device has an ultrafast recovery time, which is the time it takes for the current to cease after the breakdown voltage is removed. This helps the device achieve improved efficiency in current applications.

The low capacitance of the VS-VSKE270-12PBF rectifier diode helps reduce the electrical interference when operating at high frequencies. This helps the device to provide better EMI suppression and improved performance in sensitive electronics systems. The device also has a low leakage current, which helps ensure that no unneeded current is wasted when the device is turned off. This helps to increase the system’s overall efficiency.

Overall, the VS-VSKE270-12PBF rectifier diode is a great option for use in power supplies and other switching power supplies. Its ultrafast recovery time, low forward voltage, low capacitance and low leakage current make it well suited for high current, high frequency applications with EMI interference suppression.

The specific data is subject to PDF, and the above content is for reference

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