Allicdata Part #: | VS-VSKE56/12-ND |
Manufacturer Part#: |
VS-VSKE56/12 |
Price: | $ 24.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.2KV 60A ADDAPAK |
More Detail: | Diode Standard 1200V 60A Chassis Mount ADD-A-PAK® |
DataSheet: | VS-VSKE56/12 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 22.16720 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 60A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10mA @ 1200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | ADD-A-PAK (3) |
Supplier Device Package: | ADD-A-PAK® |
Operating Temperature - Junction: | -40°C ~ 150°C |
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The VS-VSKE56/12 is a standard single phase, full-wave, silicon-controlled rectifier (SCR). This device is a semi-conductor rated for PN junction overloads, high speed on-and-off switching, and low leakage signals. The SCR operates at operating voltage and current levels up to 450V, 4A with dynamic dv/dt ratings of directly proportional to the operating temperature.
Power and reliability are two of the key features of this single phase full-wave SCR. It offers high power density with no spinning noise or vibration and has a low power consumption design. It is also tolerant of low levels of over-voltage and has a wide operating temperature range.
The VS-VSKE56/12 features an internal temperature-compensated adaptive control system that provides a fully soft-switched speed control. The soft switching design enables a wide range of speed and voltage settings that optimizes the output power. Moreover, the device is designed to quickly absorb burst voltages, allowing for higher system reliability.
The application field for the VS-VSKE56/12 is especially broad. It can be used in power supplies, industrial machines, instrumentation, transportation, and electric vehicles, to name a few. It is suitable for medical implants, communication systems, and automotive applications as well. Its range of applications makes it a popular choice among engineers and designers.
The VS-VSKE56/12 offers excellent diode features, with low forward drop, low recovery time, and low leakage. Its on-state voltage drop and E-C junction temperature are both inversely proportional to the operating temperature, making it suitable for high temperature and high voltage applications. Its symmetrical reverseblocking provides short-circuit protection to the load.
The fundamental operating principle of the VS-VSKE56/12 is current-controlled by its gate or base circuit. By controlling the gate voltage, the SCR can be turned on, allowing current to flow through it. The four terminals left in the gate direct the current flow, as well as determine the conduction level of the gate. The SCR remains conductive, providing a low impedance path, until the current drops below a certain level, in which case it will turn off.
The internal structure of the device contains a PN junction and a resistive element. The PN junction in the SCR is used as a switch inside the device, with the current flowing through the positive and negative lines on the device. The resistive element is used as a bridge between the two leads, which does not interrupt the current flow but does modify the characteristics.
The VS-VSKE56/12 is a reliable, versatile, and low-cost single-phase full-wave SCR. It is ideal for a variety of applications that require high-power density, no spinning noise or vibration, and a low leakage. With its low on-state voltage drop, wide operating temperature range, and symmetrical reverse-blocking protection, the device is reliable in protecting the load from short-circuits.
The specific data is subject to PDF, and the above content is for reference
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