Allicdata Part #: | VS-VSKE71/10-ND |
Manufacturer Part#: |
VS-VSKE71/10 |
Price: | $ 24.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 80A ADDAPAK |
More Detail: | Diode Standard 1000V 80A Chassis Mount ADD-A-PAK® |
DataSheet: | VS-VSKE71/10 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 22.38580 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 80A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10mA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | ADD-A-PAK (3) |
Supplier Device Package: | ADD-A-PAK® |
Operating Temperature - Junction: | -40°C ~ 150°C |
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The VS-VSKE71/10 is a silicon power diode and part of the single rectifier range. It is designed for use in applications where low power dissipation and high efficiency are required. Its features include an adjustable forward current and an adjustable reverse voltage, so that it can be used for a wide range of applications.
It is also designed to be compliant with the European RoHS regulation, as well as meeting the requirements of UL/CSA and other similar standards. As such, it is suitable for use in a wide range of electrical equipment, and is available in both through-hole and surface mount packages.
The main application area of the VS-VSKE71/10 is in high frequency switching applications. It is commonly used in DC-DC converters for voltage conversion, as well as energy storage systems, inverters and uninterruptible power supplies (UPS). Its high efficiency and low power dissipation make it the ideal choice for these types of applications.
The working principle of the VS-VSKE71/10 is relatively straightforward; it allows current to flow in one direction only. This process is known as rectification, and it is achieved through the use of diodes. The voltage drop across the diode means that the current only flows in one direction, and this is how the VS-VSKE71/10 is able to regulate the flow of current.
The diode itself is constructed of two layers, or p-n junctions, of semiconductor material. The voltage applied to the device will cause current to flow in the form of electrons, which in turn will cause a voltage drop. The reverse voltage on the other hand, will block the flow of current and prevent the current from flowing in the reverse direction.
In summary, the VS-VSKE71/10 is a silicon power diode that is designed for use in high frequency switching applications. It is available in both through-hole and surface mount packages and is RoHS compliant. The working principle of the device is based on rectification, achieved through the use of two layers of semiconductor material. The device has an adjustable forward current and an adjustable reverse voltage, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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