Allicdata Part #: | VS-VSKE91/06-ND |
Manufacturer Part#: |
VS-VSKE91/06 |
Price: | $ 25.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 100A ADDAPAK |
More Detail: | Diode Standard 600V 100A Chassis Mount ADD-A-PAK® |
DataSheet: | VS-VSKE91/06 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 22.88030 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 100A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10mA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | ADD-A-PAK (3) |
Supplier Device Package: | ADD-A-PAK® |
Operating Temperature - Junction: | -40°C ~ 150°C |
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VS-VSKE91/06 Application Field and Working Principle
Classification: Diodes - Rectifiers - Single
The VS-VSKE91/06 is a three-terminal single phase diffused junction silicon rectifying diode utilizing revolutionary high speed trench technology. It is ideal for use in power supply and other applications as a rectifying diode. Features include low turn-on voltage and fast switching.
The primary application field of the VS-VSKE91/06 is of course rectification. The major use is to convert alternating current (AC) to direct current (DC) and this is commly used in power supplies. The diode can be used in a power rectifier circuit, in which the AC input is applied to the cathode somnium rectum and the anode of the rectifying diode is connected to the output load. The forward current flowing through the diode is rectified and converted from AC to DC to provide an output voltage.
When the VS-VSKE91/06 diode is forward biased, electrons from the anode move to the n-type material until full depletion, which forms an n-p junction that acts as a one-way valve for electrons moving from the anode side to the cathode side. Only electrons can pass through the junction and the current flow is only in the forward direction. When the diode is reverse biased, there is a potential across the junction and no current passes through the junction.
The other feature is reverse blocking or overvoltage protection. When a reverse voltage is applied to the diode, its junction breaks down, limiting the voltage to some extent. This increases the longevity of the device by reducing the amount of stress on its junction. That is, the diode enters the abrupt breakdown region before the avalanche region.
The low turn-on voltage of the VS-VSKE91/06 also plays a role in power efficiency. This feature reduces the amount of power wasted in the switch-on region that is frequently found in other diodes, making the entire system more efficient. The fast switching speed of the VS-VSKE91/06 also comes into play in high frequency applications. By providing a quick transition between the forward and reverse blocIcing mode, the diode can switch faster than other diodes, allowing for high frequency applications.
In conclusion, the VS-VSKE91/06 is a three-terminal single phase diffused junction silicon rectifying diode ideal for use in rectifier circuits. The low turn-on voltage and fast switching speed of the device make it preferable for high frequency applications. Additionally, the reverse blocking ability of the device increases its longevity and makes it preferable for high voltage applications.
The specific data is subject to PDF, and the above content is for reference
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