VTP8551H Allicdata Electronics
Allicdata Part #:

VTP8551H-ND

Manufacturer Part#:

VTP8551H

Price: $ 1.89
Product Category:

Sensors, Transducers

Manufacturer: Excelitas Technologies
Short Description: PHOTODIODE FAST MINI DIP PKG
More Detail: Photodiode 925nm 100° 2-DIP Module
DataSheet: VTP8551H datasheetVTP8551H Datasheet/PDF
Quantity: 4180
1 +: $ 1.71990
10 +: $ 1.43199
25 +: $ 1.20254
100 +: $ 1.03081
250 +: $ 0.91627
500 +: $ 0.83038
1000 +: $ 0.76356
Stock 4180Can Ship Immediately
$ 1.89
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Wavelength: 925nm
Color - Enhanced: --
Spectral Range: 400nm ~ 1150nm
Diode Type: --
Responsivity @ nm: 0.55 A/W @ 925nm
Response Time: --
Voltage - DC Reverse (Vr) (Max): 140V
Current - Dark (Typ): 30nA
Active Area: 7.45mm²
Viewing Angle: 100°
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 2-DIP Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Optical sensors are one of the most widely used sensing elements used to detect light and measure optical power. Photodiodes are one of the most popular components used in optical sensing and act as a light-controlled switch. The VTP8551H is an example of a silicon photodiode detector typically used in many applications.The VTP8551H is a high-efficiency, low-noise, UV-enhanced photodetector that operates in the ultraviolet (UV) wavelength range from 215nm to 320nm and has a narrow spectral response range of 20nm. It features very low reverse bias dark current, which helps maintain high signal-to-noise ratio (SNR) and low dark current noise. This photodetector is designed with a low noise preamplifier and a PIN silicon photodiode. It is also voltage based, meaning that it operates on low voltage between 4 to 12 V and is powered by an external bias voltage source.The VTP8551H is a great choice for applications such as solar cell characterization, UV spectrophotometry, laser power and optical energy measurements, fluorescence detection, laser safety, UV curing, photoelectronic integration, and many other UV sensing applications. The main purpose of a photodiode detector is to convert light energy into electrical energy. The photodiode consists of a PN-junction, which means that when illuminated at a precise wavelength range, the device performs a “photoelectric effect”, resulting in charge carriers (electrons) being generated when a photon hits the diode. The amount of electrons generated depend on the magnification of the light energy that hits the device. VTP8551H photodiodes feature high-efficiency photoelectric effect and low resistance through which electrons flow freely. Once the electrons flow towards the positive side of the photodiode, they get collected at the anode offering a subtle current in the external circuit. This current is proportional to the intensity of light energy. As a result, voltage, pulse width, and frequency can be easily measured and detected. The photodiode can be used to measure an amount of optical power present and produce an electrical signal in response to the amount of light energy incident. For instance, when the photodiode is exposed to a light source, the photocurrent is proportional to light intensity and can be used to measure optical power of the incident light.With its great performance and features, VTP8551H can be used in many different applications requiring detection of UV light. This device is sensitive up to 320nm UV wavelength range and offers superior signal-to-noise ratio, high efficiency, low dark current, and low resistance. Its low voltage power and low noise preamplifier ensures reliable operation and accurate measurements of the optical energy. The photodiode detector offers a cost-efficient solution for many different sensing applications.

The specific data is subject to PDF, and the above content is for reference

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