W19B320ATB7H

Series:	--
Packaging:	Tray
Part Status:	Discontinued at Digi-Key
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-20°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFBGA
Supplier Device Package:	48-TFBGA (6x8)

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Memory: W19B320ATB7H Application field and Working PrincipleNAND flash memory, such as the W19B320ATB7H, is widely used in many applications such as augmented reality, mobile phones, PDAs, navigation systems, and digital cameras. The benefit of the W19B320ATB7H is that it provides high storage capacities at a low cost and in small form factors. In addition, the W19B320ATB7H is stable, durable, and capable of storing data for long periods of time. This makes it ideal for applications requiring large amounts of data storage, such as digital music distribution or parsing.The W19B320ATB7H is a NAND flash memory device, which includes various features that make it an ideal choice for many applications. This memory device has 1G bytes of capacity and works with a 1.8V to 3V power supply and single power supply operation. It also has a maximum programming time of 10μs per byte for all operations, including program, erase, write, and read. In addition, the W19B320ATB7H supports Samsung\'s S3C2440 and S5PC110 processors.The main function of the W19B320ATB7H is to store data without having to use any external storage medium. It works by storing data in an organized way in the form of pages and blocks. The internal logic of the memory device handles most of the operations, including read, write, and erase. The memory is divided into two separate address spaces: the user space, which is typically used to store user data, and the system space, which is used to store some of the internal operations, such as the internal firmware of the memory device.The W19B320ATB7H supports various kinds of commands, depending on the type of operation requested. Generally speaking, there are three main types of commands used in the device: read, write, and erase. A read command is used to retrieve data that has been stored in the device. The device also supports a write command, which is used to store new data into the device. The erase command is used to delete data from the memory device.The W19B320ATB7H is not only a memory device but also offers additional functionality. It is capable of providing an adjusting voltage for optimal reading and writing operations and an adjustable programming speed to maximize the performance of different operations. In addition, the W19B320ATB7H offers a temperature monitoring function which helps to maintain the temperature while running operations. The device also has a powerful error correction code (ECC) to ensure the highest level of accuracy while writing and reading the data.The W19B320ATB7H provides an exceptional design for highly reliable data storage, making it an ideal memory device for many different applications. Its small size and cost-effectiveness allow for simple integration into low-cost and space-limited systems, such as augmented reality, mobile phones, and digital cameras. The W19B320ATB7H is also highly reliable, thanks to its adjustable voltage, adjustable programming speed, temperature monitoring, and powerful error correction code. All of these features enable it to overcome the challenges of reading, writing, and erasing data from the memory device.

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