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W25Q64JVSFIQ TR Application Field and Working Principle

Introduction

W25Q64JVSFIQ TR is a 65,536Kbit high performance serial flash memory device. This type of device is composed of 8 independently controlled flash memory banks, each of which is 4M (4,194,304) bytes in size. It is a fully integrated device with low operating current and a high level of integration. It is suitable for low-voltage, high-performance application and embedded system products that require fast access and high reliability.

Memory Categories of W25Q64JVSFIQ TR

W25Q64JVSFIQ TR is a type of non-volatile memory. Non-volatile memory is a memory which will retain its contents even after the power is removed. Non-volatile memory is divided into three major categories: EPROM, EEPROM and FLASH memory. EPROM (erasable programmable read-only memory) requires exposure to ultraviolet light before being erased; EEPROM (electrically erasable programmable read-only memory) is a form of EPROM that can be erased electronically, by applying a voltage to the chip; FLASH memory is a form of EEPROM that can be written to and erased more quickly than other types of memory. W25Q64JVSFIQ TR is a type of FLASH memory.

Applications of W25Q64JVSFIQ TR

• The W25Q64JVSFIQ TR is widely used in embedded systems and industrial automation control applications.
• It can also be used in modems, printers and fax machines, as well as in other applications.
• In addition, the device is suitable for data storage and retrieval in applications such as automotive sensing, digital cameras, digital TVs and USB drives.
• The W25Q64JVSFIQ TR can also be used in multimedia applications, such as MP3 players, computer video game consoles, video editing, and video streaming.
• Furthermore, it can be applied in secure digital card readers, GPS navigation systems, device networking, and various digital content transfer operations.

Working Principle of W25Q64JVSFIQ TR

The W25Q64JVSFIQ TR device uses a two-wire serial interface for communication. This interface consists of a data line (SI) and a clock line (SCK). The SI line carries data in a two-wire serial interface format and is configured as an input. The SCK line is configured as an output. The data bits are sent on the SI line, on the rising edge of the SCK clock. The data line is then read on the falling edge of SCK.

The devices has an 8-byte page access which allows up to 16-page "all on memory." When a data write operation is requested, the flash memory device divides the entire memory space into several memory banks. Each bank is 4M (4, 194, 304) bytes in size and is configured as 16 pages x 256 bytes. Each page is divided into 4 parts, each part is of 8 bytes "all on memory”. The 8 bytes are latched on the rising and falling edge of the SCK.

The devices also have an “all on selection” mode: when an “all on” write operation is requested, flash memory device latches all 8 bytes from the SI line, on both edges of the SCK. As soon as 16 pages are written, the W25Q64JVSFIQ TR device simply disables the SCK clock, signals the end of transfer by making DREQ high and alerts the host that the page has been written. In the same way, when data read operation is requested, 8 bytes of data will be output from the SO line, on both rising and falling edges of SCK.

Conclusion

The W25Q64JVSFIQ TR is a low-voltage, high-performance and highly integrated FLASH memory device. It is suitable for a wide range of applications and has a number of advanced features, including a fast serial interface, 8-byte page access, and “all on” write and read operation.

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