Allicdata Part #: | W29GL032CH7T-ND |
Manufacturer Part#: |
W29GL032CH7T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC FLASH 32M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral... |
DataSheet: | W29GL032CH7T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 32Mb (4M x 8, 2M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
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W29GL032CH7T is a type of nonvolatile memory that uses floating-gate transistors to store digital data. Unlike traditional RAM, this type of nonvolatile memory does not require power to retain data, making it ideal for applications that require data retention even in the event of a power failure or emergency shutdown. The W29GL032CH7T uses a Multi-Level Cell (MLC) architecture to store up to 8 bits of data in a single floating-gate transistor. This is done by controlling the number of charge layers on the transistor’s floating-gate, which determines the state of the transistor, and thus the value of the stored data.
The W29GL032CH7T is commonly used in embedded systems such as automotive ECUs, industrial automation, gaming, IoT devices, and other critical applications that require reliable data storage. It is designed to be rugged and reliable, and can withstand temperatures ranging from -40°C to +85°C. It requires no battery backup for data retention and has a write endurance of 100,000 cycles.
The W29GL032CH7T uses Floating-Gate Transistor (FGT) technology to store data in its Multi-Level Cell (MLC) memory cells. This technology uses a “one transistor-one bit” architecture. An MLC cell is a type of nonvolatile memory cell that can store two or more bits of digital data. This is done by controlling the number of charge layers that are placed on the transistor’s floating-gate. This is done by applying a voltage to the transistor’s drain, which causes an electric field. The thickness of the charge layers determine the threshold voltage of the transistor, which is then used to read the value of the stored data.
The W29GL032CH7T also features error detection and correction (EDCE) capabilities. EDCE is a technique used to detect and correct errors that may occur during the read or write process. This is done by checking the integrity of the read/write operations, and correcting any errors that are detected. EDCE is essential for reliable and robust data storage, and is used in applications where data integrity is critical.
Overall, the W29GL032CH7T is a robust and reliable memory solution for applications that require reliable data storage, especially in embedded systems that require high-temperature operation and long-term data retention. This solution uses a Multi-Level Cell (MLC) architecture and Floating-Gate Transistor (FGT) technology to store data, and features error detection and correction (EDCE) capabilities that ensure the integrity of the stored data.
The specific data is subject to PDF, and the above content is for reference
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