W29GL256SH9C

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W29GL256SH9C application field and working principle

W29GL256SH9C is a Memory device which is produced by Winbond, a well-known semiconductor manufacturer. It is a 256Mbit SDRAM organized as 16Mwords by 16bits. It is suitable for the applications requiring high speed data read and write operations such as multi-media operating system, memory intensive audio and video processing, game design and DVR.

The W29GL256SH9C has an advanced bank-page architecture which allows up to two outstanding page reads or writes. The speed operation is up to 133MHz at 5ns read/write cycle and a burst mode up to 2 cycles without additional wait state. It is also incorporates a 2Kbytes array to reduce the number of address pins. In addition, it supports burst length of 1 to 8 words and multiplexed address/data bus that enables 32-bit/16-bit wide support.

The W29GL256SH9C operates on a supply voltage of 3.3V±0.3V and consumes up to 3W power during read/write operations and 0.5 W during power down mode. The chip contains embedded Error Checking and Correcting (ECC) for data integrity and supports Data-Bitslane Masking (DQMB) feature to further reduce the number of address pins. The device also incorporates protection of write enable pin which prevents inadvertent programming operations.

The W29GL256SH9C uses a new DRAM Technology which combines both fast page and static column access modes. In page mode accesses, the same row address can be used with many column addresses allowing consecutive related addresses to be accessed at the same time without changing the row address. This reduces memory access time and improves system performance. In static column mode, the column address can be used to access consecutive locations in the same page without changing the page address. This ensures fast access of continuously referred memory addresses.

The W29GL256SH9C are organized as 16M words by 16bits, and The device can be operated in 14 row and 10 column address modes for full operation. Its addressing capability adds to the flexibility of its operation and provides improved system performance. The device supports a write latency of 5ns and is compatible with a variety of common industry bus cycles. It supports multiplexed address/data bus and 32-bit/16-bit wide support. The device also supports Double Data Rate (DDR) operation, which increases data transfer rate to a maximum of 133MHz.

The W29GL256SH9C also supports an array of error correction techniques including Error Checking and Corrections (ECC) and Data-Bitslane Masking (DQMB). The ECC ensures data integrity while the DQMB ensures additional protection of data which can be masked as per requirement. This helps to improve system performance and reduce operation cost.

The W29GL256SH9C is a highly efficient and powerful Memory device which provides high speed data read and write operations and includes a wealth of features and functionalities which help to maximize system performance. The high speed and multiplexed address/data bus operations allow for fast data transfer rates and improved system performance. In addition, the ECC and DQMB ensure data integrity during data read and write operations.

The W29GL256SH9C is ideal for use in a variety of applications such as multi-media operating system, memory intensive audio and video processing, gaming and DVR systems. Its versatile design and enhanced error correction techniques make it an excellent choice for these demanding applications.

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