W29GL512PL9T TR Allicdata Electronics
Allicdata Part #:

W29GL512PL9TTR-ND

Manufacturer Part#:

W29GL512PL9T TR

Price: $ 2.98
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 512M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa...
DataSheet: W29GL512PL9T TR datasheetW29GL512PL9T TR Datasheet/PDF
Quantity: 1000
1000 +: $ 2.70094
Stock 1000Can Ship Immediately
$ 2.98
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

W29GL512PL9T TR application field and working principle

Memory is essential in a computer system, and W29GL512PL9T TR integrated memory fullfills that role as an electrically erasable programmable read-only memory (EEPROM). This device has been developed as a non-volatile memory with an access time of 10 ns, making it suitable for a wide range of applications, including data storage, communication and audio applications.

Application fields

The W29GL512PL9T TR is particularly suited to applications that require a large memory capacity and low-power operation. This device is mainly used in consumer electronics, such as digital music players, mobile phones and games consoles, as well as in automotive and medical equipment. It also finds use in industrial applications, such as data logging and monitoring systems.

Working principle

The W29GL512PL9T TR integrated memory operates using a charge pump system that produces 10 V erased states. The 10 V erased level is maintained by an internal charge pump which generates positive and negative voltages. These charges are stored in an array of cells that are accessed using an address bus. Once an address is selected, the data is read from or written to the cell. The charge pump system enables the device to maintain the 10 V erased level at the same frequency and voltage, enabling it to access and store data quickly and accurately.

Conclusion

The W29GL512PL9T TR is a versatile and reliable integrated memory device, capable of providing fast and reliable access to data for a variety of applications. It is designed for low-cost, low-power operation and features a charge pump system that enables the device to maintain its 10 V erased level. This makes it especially well-suited to a range of consumer, automotive and medical applications.

The specific data is subject to PDF, and the above content is for reference

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