Allicdata Part #: | W9425G6EH-5-ND |
Manufacturer Part#: |
W9425G6EH-5 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 256M PARALLEL 66TSOP II |
More Detail: | SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 25... |
DataSheet: | W9425G6EH-5 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 256Mb (16M x 16) |
Clock Frequency: | 250MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP II |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The W9425G6EH-5 is a 5 ns, 256Mb Multi-Bank Asynchronous DRAM. This DRAM device is one of the fastest available, and provides a high-speed memory solution for designers that have a need for fast-operating memories. This device can be used in applications such as multiplexing, digital signal processing, and graphics. With this device, designers can now get faster data throughput in their designs.
The W9425G6EH-5 is a low-power device with full-temperature capability and is suitable for a wide range of applications. The device comes with a 3.3V supply voltage, and the data bus can be operated at up to 533 MHz. The device supports up to 4 banks of memory, and up to sixty-four 32-bit transactions per clock cycle. The device also offers an ECC protection scheme to help ensure data integrity.
The working principle of the W9425G6EH-5 is based on the COMS (Continuous Operation Memory System) architecture. This architecture allows the device to have a multi-bank structure, allowing for more banks of memory to be accessed simultaneously. The device also supports burst-mode operation, where data can be transferred from one bank to another in bursts. This allows for faster data transfer, which helps to improve the overall throughput of the device.
The device uses a pipeline architecture, which allows for multiple instructions to be executed at the same time. This is achieved by having two separate pipelines, one for instruction fetch operations and one for instruction decode operations. The pipeline architecture allows for higher throughput of instructions, which helps to improve the performance of the device.
The W9425G6EH-5 is a very versatile DRAM device, with its fast speed and low-power capability. It is capable of handling high-performance applications, such as multiplexing, digital signal processing, and graphics. With its high speed, the device provides designers with faster data throughput in their designs. In addition, its pipeline architecture and ECC protection scheme ensure data integrity and overall performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
W9425G6KH-5 | Winbond Elec... | -- | 179 | IC DRAM 256M PARALLEL 66T... |
W9425G6EH-5 | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 66T... |
W9425G6KH-5 TR | Winbond Elec... | 1.3 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
W9425G6KH-4 | Winbond Elec... | 1.51 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
W9425G6KH-5I TR | Winbond Elec... | 1.7 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
W9425G6KH-5I | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 66T... |
W9425G6JB-5 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 256M PARALLEL 60T... |
W9425G6JB-5I | Winbond Elec... | 3.48 $ | 1000 | IC DRAM 256M PARALLEL 60T... |
W9425G6JB-5 | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 60T... |
W9425G6JB-5I TR | Winbond Elec... | 3.05 $ | 1000 | IC DRAM 256M PARALLEL 60T... |
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