W9751G6KB25I TR Allicdata Electronics
Allicdata Part #:

W9751G6KB25ITR-ND

Manufacturer Part#:

W9751G6KB25I TR

Price: $ 2.14
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 512M PARALLEL 84WBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 4...
DataSheet: W9751G6KB25I TR datasheetW9751G6KB25I TR Datasheet/PDF
Quantity: 1000
2500 +: $ 1.94775
Stock 1000Can Ship Immediately
$ 2.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-WBGA (8x12.5)
Description

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The W9751G6KB25I TR contains a high capacity static random access memory (SRAM), which is a type of volatile memory. It is characterized by its fast access time, high speed operational frequency and random access capability. It can be used for various purposes, such as data storage, data input/output, and memory mapping. The main application fields for W9751G6KB25I TR include: industrial, automotive, aerospace, medical, consumer electronics, and computer gaming.

Working principle of W9751G6KB25I TR:

The SRAM device consists of an array of memory cells, which are connected to either one or two data ports, depending on the size of the device and the operating voltage. Each memory cell is an inverter connected with two data ports that store a single bit of data. To read data from the device, an address is sent to the SRAM device and the corresponding data is taken out from the port connected to the memory cell. To write data into the device, the same process is followed but the data is written into the appropriate port instead of the read port.

The W9751G6KB25I TR has a high speed operating frequency of up to 400MHz and a low standby power of only 0.1 µW, making it suitable for a wide range of industrial applications. It features an asynchronous SRAM design, which enables extremely fast data transfer and read/write operations compared to other types of static RAM. It also features error correction circuitry to protect data integrity and Double Data Rate (DDR) operation for improved performance.

The connecting interface of the W9751G6KB25I TR is a 1.2V - 1.8V low voltage differential signaling (LVDS) that makes it ideal for applications where power efficiency is a priority. It also offers an internal oscillator for precise timing, data strobe support, and on-die ECC for improved system reliability.

In short, the W9751G6KB25I TR is a high capacity, high speed, and low power static RAM device, suitable for a wide range of industrial, automotive, aerospace, medical, consumer electronics, and computer gaming applications. Its high speed operation, low standby power, and error correction circuitry make it an ideal choice for any embedded application.

The specific data is subject to PDF, and the above content is for reference

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