W978H2KBQX2I

The W978H2KBQX2I is a type of high-performance, low-voltage CMOS (Complementary Metal Oxide Semiconductor) Static Random Access Memory (SRAM). It is one of the many technologies used in memory applications today. This application field and working principle have an impact on data storage and operation for many electronic devices.

Application Field

W978H2KBQX2I technology is primarily used for data storage and retrieval in multi-chip applications such as embedded systems, server clusters and mobile devices. This type of SRAM can store up to 512Kbits per chip and provides a fast access time of 10 nanoseconds. The chip is usually connected to a processor via a bus and can be used in a single package, or as part of multiple chips. Its low power consumption and fast access time make it an ideal choice for embedded and mobile applications.

Working Principle

The W978H2KBQX2I SRAM is a semiconductor memory device that stores data bits in an array of single-bit-cells. Each cell is comprised of four transistors and an access transistor to control data access. The cell can store either a logic one or a logic zero. The data is written to the cells by applying a voltage to one of the bit lines, while to read the cells, another voltage is applied to another bit line. The cell then returns either a logic one or a logic zero depending on the data stored in the cell.

Conclusion

The W978H2KBQX2I is a type of high-performance, low-voltage CMOS SRAM primarily used in embedded systems, server clusters and mobile applications. This SRAM stores up to 512Kbits of data and offers fast access times, making it an ideal choice for many applications. The cell stores data using four transistors and an access transistor, which can be read or written to by applying an appropriate voltage to the cell.

W978H6KBQX2I	Winbond Elec...	2.62 $	1000	IC DRAM 256M PARALLEL 168...
W978H2KBVX2E	Winbond Elec...	3.44 $	1000	IC DRAM 256M PARALLEL 134...
W978H2KBQX2E	Winbond Elec...	2.62 $	1000	IC DRAM 256M PARALLEL 168...
W978H2KBVX2I	Winbond Elec...	3.44 $	1000	IC DRAM 256M PARALLEL 134...
W978H6KBVX2I	Winbond Elec...	4.32 $	171	IC DRAM 256M PARALLEL 134...
W978H2KBQX2I	Winbond Elec...	2.66 $	1000	IC DRAM 256M PARALLEL 168...
W978H6KBQX2E	Winbond Elec...	2.59 $	1000	IC DRAM 256M PARALLEL 168...
W978H6KBVX2E	Winbond Elec...	4.32 $	4621	IC DRAM 256M PARALLEL 134...