W9812G6KH-6 TR Allicdata Electronics
Allicdata Part #:

W9812G6KH-6TR-ND

Manufacturer Part#:

W9812G6KH-6 TR

Price: $ 1.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 128M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5n...
DataSheet: W9812G6KH-6 TR datasheetW9812G6KH-6 TR Datasheet/PDF
Quantity: 1000
1000 +: $ 1.00790
Stock 1000Can Ship Immediately
$ 1.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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A W9812G6KH-6 TR is a 6-transistor (6T) random-access memory (RAM), which is a type of memory cycling storage device used in digital circuits. It is most commonly found in computers, where it is used for short-term data storage and retrieval. This type of memory is non-volatile, meaning it does not require a power source in order to keep its data. The term “random” in the name refers to the fact that data can be written to and read from any location in the memory, as opposed to sequentially.

The W9812G6KH-6 TR is a single-port, 6-bit-wide random-access memory. It has two address lines (A and B) and three data lines (D0-D2). Each memory cell is made up of two series-connected transistors, with one side connected to the data line and the other side connected to the address line. This arrangement of transistors is referred to as a 6T cell.

In order to read from or write to a memory cell, the memory must be activated by a suitable control signal, such as a write enable (WE) or read enable (RE) signal. When the control signal is asserted, the appropriate address line is driven high, which turns on the 6T cells connected to that address line. The data line is then set to the corresponding data state, either a “1” or a “0,” depending on the type of operation being performed.

When a “1” is written to a memory cell, the two series-connected transistors form a conducting path, allowing current to flow through them. When a “0” is written, the transistor path is broken and current is prevented from flowing. This maintains the data in the memory cell. The memory can then be read out by driving the appropriate address line and sense the information on the data line.

The W9812G6KH-6 TR is a versatile and reliable form of non-volatile memory. It is well-suited for use in applications such as memory ICs, ROMs, flash memory, and other storage devices. Given its cost-effectiveness and high-density, the W9812G6KH-6 TR is commonly found in consumer electronics, laptops, and embedded systems.

The W9812G6KH-6 TR provides a fast access time and low power consumption, making it an ideal choice for mobile applications. The 6T cells are also highly reliable, with a failure rate of less than one in every one billion write cycles. All these features combined make the W9812G6KH-6 TR an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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