W9825G6KH-6I Allicdata Electronics
Allicdata Part #:

W9825G6KH-6I-ND

Manufacturer Part#:

W9825G6KH-6I

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 256M PARALLEL 54TSOPSDRAM Memory IC 256Mb ...
More Detail: N/A
DataSheet: W9825G6KH-6I datasheetW9825G6KH-6I Datasheet/PDF
Quantity: 12677
Stock 12677Can Ship Immediately
Specifications
Series: W9825G6KH
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Base Part Number: W9825G6
Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   sales@allicdata.com


1. DESCRIPTION

W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. To fully comply with the personal computer industrial standard, W9825G6KH is sorted into the following speed grades: -5, -5I, -6, -6I, -6J, -6L, -75, 75J and 75L. The -5/-5I grade parts are compliant to the 200MHz/CL3 specification (the -5I industrial grade which is guaranteed to support -40°C ≤ TA ≤ 85°C). The -6/-6I/-6J/-6L grade parts are compliant to the 166MHz/CL3 specification (the -6I industrial grade which is guaranteed to support -40°C ≤ TA ≤ 85°C, the -6J industrial plus grade which is guaranteed to support -40°C ≤ TA ≤ 105°C). The -75/75J/75L grade parts are compliant to the 133MHz/CL3 specification (the 75J industrial plus grade which is guaranteed to support -40°C ≤ TA ≤ 105°C). The -6L and 75L grade parts support self refresh current IDD6 max. 1.5 mA. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9825G6KH is ideal for main memory in high performance applications.

2. FEATURES

    1. 3.3V ± 0.3V Power Supply

    2. Up to 200 MHz Clock Frequency

    3. 4,194,304 Words × 4 Banks × 16 Bits Organization

    4. Self Refresh Mode: Standard and Low Power

    5. CAS Latency: 2 and 3

    6. Burst Length: 1, 2, 4, 8 and Full Page

    7. Burst Read, Single Writes Mode

    8. Byte Data Controlled by LDQM, UDQM

    9. Power Down Mode

  10. Auto-precharge and Controlled Precharge

  11. 8K Refresh Cycles/64 mS, @ -40°C ≤ TA ≤ 85°C

  12. 8K Refresh Cycles/16 mS, @ 85°C < TA ≤ 105°C

  13. Interface: LVTTL

  14. Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant


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