W9864G6IH-6 Allicdata Electronics
Allicdata Part #:

W9864G6IH-6-ND

Manufacturer Part#:

W9864G6IH-6

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 64M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5ns...
DataSheet: W9864G6IH-6 datasheetW9864G6IH-6 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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Memory

W9864G6IH-6 is a type of memory stored in integrated circuits that are used to store digital data and can be read, written, modified or erased cyclically. It is based on DRAM (Dynamic Random Access Memory) technology and is a type of non-volatile memory, meaning that the information stored in it isn\'t lost when the power supply is switched off. It has application in various fields where a reliable and low-cost data storage is needed.

Application Fields

W9864G6IH-6 are mainly used in consumer electronics such as digital cameras, MP3 players and smart phones, which require quick access to large amounts of data. They\'re also commonly used in computers to store operational data and the operating system, as well as graphics data to be used by the video card. Moreover, W9864G6IH-6 are used in telecoms radios and equipment, equipment for medical and automotive applications, industrial automation or in military equipment.

Working Principle

The working principle of W9864G6IH-6 is based on an array of thin-film transistors (TFT) formed on a substrate of silicon. The transistors are triggered by capacitors that store an electrical charge in order to represent the binary data (1s and 0s). The data are read and written using a read/write hot electrodes that allow the electric current to enter the cell and change the stored charge, thus reflecting the data. The cells are placed in a grid of rows and columns and each cell is individually addressable.

Overall, W9864G6IH-6 is a type of non-volatile memory based on DRAM technology, suitable for a huge range of applications from consumer electronics to military applications, due to its low cost, scalability and fast access times. It is formed from an array of thin-film transistors connected to capacitors and its data is read, written or modified using electrodes.

The specific data is subject to PDF, and the above content is for reference

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