Allicdata Part #: | WD3UN01GX808-1333K-PE-ND |
Manufacturer Part#: |
WD3UN01GX808-1333K-PE |
Price: | $ 0.00 |
Product Category: | Memory Cards, Modules |
Manufacturer: | Wintec Industries |
Short Description: | MODULE DDR3 SDRAM 1GB 240DIMM |
More Detail: | Memory Module DDR3 SDRAM 1GB 1.333GHz 240-DIMM |
DataSheet: | WD3UN01GX808-1333K-PE Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | DDR3 SDRAM |
Memory Size: | 1GB |
Speed: | 1.333GHz |
Package / Case: | 240-DIMM |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
WD3UN01GX808-1333K-PE is a memory module developed by Wuxi Defeng Technology Co., Ltd, a leading manufacturer of semiconductor memory devices in China. It is a DDR3 SDRAM module, and is designed as an ideal solution for high performance applications. The product is a device composed of two double data rate (DDR) synchronous DRAMs in its core, that are connected to a memory controller, chipset, and other logic providing high-speed and low latency data access.
Application Field
WD3UN01GX808-1333K-PE is suitable for high-end servers, embedded systems, telecoms, communications, gaming, industrial and medical applications. It is an ideal memory source for high performance applications, where reliable and high speed data access is essential. This product can also provide higher memory density for compact designs. It also features smart power management for low power consumption.
Working Principle
The operating principle of WD3UN01GX808-1333K-PE is based on dynamic random access memory (DRAM). This module uses double data rate operations to increase speed and performance. In the DRAM process, electrical signals are applied on the CAS (column address strobe), RAS (row address strobe) and WE (write enable) lines for reading and writing onto/from the memory array. Data is temporarily held in the DRAM array before being transferred to/from the chipset, CPU or other device. The memory controller communicates with the DRAM array by controlling the timing and the voltage levels given to these lines.
The speed of the module is determined by the speed of the DRAM. This module uses high speed DDR3 RAMs, operating at up to 1333MHz. DDR3 RAM runs two double edge clock cycles per internal cycle at the same frequency, thus doubling the peak transfer rate as compared to DDR2 RAM. The increased data transfer bandwidth allows for higher levels of performance and quicker access to data in real-time applications.
Conclusion
WD3UN01GX808-1333K-PE provides an effective solution for high performance applications, where reliable and high speed data access is essential. Its advanced DRAM technology enables it to perform faster, and thus delivers robust performance. It also offers low power consumption, and can provide higher memory density for compact designs. Consequently, this product may be a suitable choice for applications such as high-end servers, embedded systems, telecoms, communications, gaming, industrial and medical applications.
The specific data is subject to PDF, and the above content is for reference
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