WHC1R0FET Allicdata Electronics

WHC1R0FET Resistors

Allicdata Part #:

WHC1R0FETR-ND

Manufacturer Part#:

WHC1R0FET

Price: $ 0.25
Product Category:

Resistors

Manufacturer: Ohmite
Short Description: RES 1 OHM 2W 1% AXIAL
More Detail: 1 Ohms ±1% 2W Through Hole Resistor Axial Wirewou...
DataSheet: WHC1R0FET datasheetWHC1R0FET Datasheet/PDF
Quantity: 1000
1000 +: $ 0.22145
2000 +: $ 0.21645
5000 +: $ 0.21229
10000 +: $ 0.20729
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Series: WH
Packaging: Tape & Reel (TR) 
Part Status: Active
Resistance: 1 Ohms
Tolerance: ±1%
Power (Watts): 2W
Composition: Wirewound
Features: --
Temperature Coefficient: ±50ppm/°C
Operating Temperature: -55°C ~ 150°C
Package / Case: Axial
Supplier Device Package: Axial
Size / Dimension: 0.180" Dia x 0.449" L (4.57mm x 11.40mm)
Height - Seated (Max): --
Number of Terminations: 2
Failure Rate: --
Description

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THROUGH HOLE RESISTORS

Through hole resistors, commonly referred to as THRs, are devices that are designed to resist a certain voltage or current flow through them. They are usually made of a durable metal or alloy that is able to handle the high currents and voltages that can be associated with these types of components. They are often used in power systems, automotive applications and various other electronic applications.

Whc1r0FET, developed by Whirlpool Corporation, is a kind of through hole resistor. It is a high-performance, long-life resistor which can handle up to 24 amp of current and has an operating temperature range from -40 °C to +125 °C. The design of Whc1r0FET ensures a very low ESR value and excellent noise suppression characteristics.

The application field of Whc1r0FET varies from bus bars circuits, automotive power systems, battery safeguards, motor control circuits to D-C motor and transducers due to its better surge capability and long lifespan. It also can be applied to in-situ sensor based systems, LED lighting, automotive switch mode power supplies and various measurements.

The working principle of Whc1r0FET utilizes a combination of an insulating substrate and a metal-oxide-semiconductor (MOS) film to form the dynamic resistor. The MOS film is a thin dielectric film that is placed between the external metal electrodes. When the MOS film is exposed to an electric field, it produces positive and negative charges that are collected at the two ends of the device, which creates an electric potential. The degree of current flow through the device is determined by the electric potential, which is regulated by the resistor.

The resistor works in three stages: measurement, selection, and protection. Firstly, input signals are received and analyzed to determine the operating conditions of the system. Then, a suitable resistor is selected in order to optimize the system’s performance. Lastly, the resistor offers protected operation for the system. This protection is provided thanks to the large current capacity, slow overload, and effective self-protection.

Overall, Whc1r0FET is an excellent choice for applications with high power, long lifetime, and low ESR. Its ability to withstand high temperatures and voltages makes it suitable for a variety of industrial, automotive, and medical applications. Moreover, its distinctive combination of versatility, robustness, and reliability is what sets it apart from traditional through hole resistors.

The specific data is subject to PDF, and the above content is for reference

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