WHDR10FET Allicdata Electronics

WHDR10FET Resistors

Allicdata Part #:

WHDR10FETTR-ND

Manufacturer Part#:

WHDR10FET

Price: $ 0.30
Product Category:

Resistors

Manufacturer: Ohmite
Short Description: RES 0.1 OHM 3W 1% AXIAL
More Detail: 100 mOhms ±1% 3W Through Hole Resistor Axial Wire...
DataSheet: WHDR10FET datasheetWHDR10FET Datasheet/PDF
Quantity: 3500
500 +: $ 0.27360
1000 +: $ 0.22743
2500 +: $ 0.22230
5000 +: $ 0.21803
12500 +: $ 0.21290
Stock 3500Can Ship Immediately
$ 0.3
Specifications
Series: WH
Packaging: Tape & Reel (TR) 
Part Status: Active
Resistance: 100 mOhms
Tolerance: ±1%
Power (Watts): 3W
Composition: Wirewound
Features: --
Temperature Coefficient: ±90ppm/°C
Operating Temperature: -55°C ~ 150°C
Package / Case: Axial
Supplier Device Package: Axial
Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm)
Height - Seated (Max): --
Number of Terminations: 2
Failure Rate: --
Description

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Through Hole Resistors are widely used in a variety of commercial, industrial, and consumer electronics applications. The WHDR10FET is one such resistor that has been specifically designed to provide reliable, safe and accurate performance. The WHDR10FET is a thin-film FET resistor technology that is manufactured in a through-hole design. It offers various benefits, including temperature stability and resistance to vibration, shock and humidity. This article will provide an overview of the WHDR10FET application field and working principle.

The WHDR10FET application field has a variety of uses and can be found in almost any industry. It is most commonly used in high power applications, such as automotive lighting, audio amplifiers, switching converters, telecom modulated transmitters and more. The through-hole design of the WHDR10FET also makes it an excellent choice for industrial environments that are subjected to vibration, shock, and temperature fluctuations. In addition, it provides excellent humidity resistance when used in outdoor applications.

In terms of working principles, the WHDR10FET is a thermal resistive semiconductor that is designed to achieve optimal performance, even at high temperatures. It works by utilizing a thin film FET to control the flow of current. This thin film FET is then connected to the outside of the resistor by gold plated electrodes. The electrodes are used to get the device to operate, while the thin film of the FET provides the low electrical resistance characteristics that are essential for accurate and reliable performance.

The WHDR10FET is a complex device, yet it provides a variety of features and benefits. It has a low temperature coefficient, meaning that it can operate without much fluctuation even when exposed to extreme temperatures. It also has a high breakdown voltage rating, allowing it to withstand high levels of electrical activity without compromising its operation. In addition, the device offers excellent humidity resistance, making it well-suited for outdoor applications.

The WHDR10FET is a widely used device for a variety of commercial, industrial, and consumer electronics applications. The device’s through-hole design makes it an ideal choice for applications that require reliable performance in tough environments. It is also a highly efficient device that provides accurate performance while managing low electrical resistance characteristics. The WHDR10FET works by using a thin film FET to control the flow of current in a resistive semiconductor, allowing it to achieve optimal performance, even at high temperatures.

The specific data is subject to PDF, and the above content is for reference

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