WHE250FET Resistors |
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Allicdata Part #: | WHE250FETTR-ND |
Manufacturer Part#: |
WHE250FET |
Price: | $ 0.31 |
Product Category: | Resistors |
Manufacturer: | Ohmite |
Short Description: | RES 250 OHM 5W 1% AXIAL |
More Detail: | 250 Ohms ±1% 5W Through Hole Resistor Axial Wirew... |
DataSheet: | WHE250FET Datasheet/PDF |
Quantity: | 500 |
500 +: | $ 0.28080 |
1000 +: | $ 0.23342 |
2500 +: | $ 0.22815 |
5000 +: | $ 0.22376 |
12500 +: | $ 0.21850 |
Series: | WH |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Resistance: | 250 Ohms |
Tolerance: | ±1% |
Power (Watts): | 5W |
Composition: | Wirewound |
Features: | -- |
Temperature Coefficient: | ±20ppm/°C |
Operating Temperature: | -55°C ~ 150°C |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Size / Dimension: | 0.295" Dia x 0.787" L (7.50mm x 20.00mm) |
Height - Seated (Max): | -- |
Number of Terminations: | 2 |
Failure Rate: | -- |
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Through Hole Resistors have been a pervasive technology used in numerous types of applications. WHE250FET is one type of Through Hole Resistor which has gained a lot of popularity in recent years due to its superior performance and low cost. In this article, we will discuss the application field and working principle of WHE250FET.
The application field of WHE250FET is mainly in power electronics systems. It is an ideal component for medium and high power applications due to its wide range of voltage ratings and low temperature coefficient of resistance. In addition to its excellent performance in power electronics systems, WHE250FETs are also used in many other industrial applications such as automotive electronics, telecommunications equipment, renewable energy systems, audio systems, and medical devices.
The working principle of WHE250FET is based on the principle of PTC (Positive Temperature Coefficient) behavior. PTC is a material property that describes the increase in the resistance of an electrical component when the temperature increases. In the case of WHE250FET, when the temperature increases above the rated temperature, the PTC effect will cause the resistance of the resistor to increase in order to protect the circuit from excess power dissipation. As a result, the resistance of WHE250FET increases exponentially with temperature.
One of the key differences between WHE250FET and other conventional through hole resistors is that WHE250FETs use a metal oxide film as the resistive element instead of a metal wire. The metal oxide film used in WHE250FETs is formed by vapor-depositing a layer of thin metal onto a ceramic substrate. The layer of metal provides a much lower temperature coefficient of resistance compared to other conventional through hole resistors.
In addition to its low temperature coefficient of resistance, WHE250FETs are also more robust and reliable. The metal oxide film used in WHE250FETs has a much better temperature cycling resistance than other materials, which makes them much more suitable for applications that require frequent power management cycles.
Overall, WHE250FETs are ideal for applications that require a reliable, robust, and low-temperature-sensitive resistor. These components offer a wide range of rated voltages and are suitable for medium to high power applications. Their use of metal oxide film as the resistive element improves performance and reliability, and gives them a much lower temperature coefficient of resistance compared to other conventional through hole resistors.
The specific data is subject to PDF, and the above content is for reference
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