WNA75RFET Resistors |
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Allicdata Part #: | WNA75RFETR-ND |
Manufacturer Part#: |
WNA75RFET |
Price: | $ 0.30 |
Product Category: | Resistors |
Manufacturer: | Ohmite |
Short Description: | RES 75 OHM 1/2W 1% AXIAL |
More Detail: | 75 Ohms ±1% 0.5W, 1/2W Through Hole Resistor Axial... |
DataSheet: | WNA75RFET Datasheet/PDF |
Quantity: | 4000 |
1000 +: | $ 0.27531 |
2000 +: | $ 0.26910 |
5000 +: | $ 0.26393 |
10000 +: | $ 0.25772 |
Series: | WN |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Resistance: | 75 Ohms |
Tolerance: | ±1% |
Power (Watts): | 0.5W, 1/2W |
Composition: | Wirewound |
Features: | Non-Inductive |
Temperature Coefficient: | ±20ppm/°C |
Operating Temperature: | -55°C ~ 150°C |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Size / Dimension: | 0.100" Dia x 0.200" L (2.54mm x 5.08mm) |
Height - Seated (Max): | -- |
Number of Terminations: | 2 |
Failure Rate: | -- |
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Through Hole Resistors are integral components in many electronics projects and applications. WNA75RFET, or Wide-Stitch Non-Assertive Shielded Controlled Impedance Resistors, are some of the most popular types of through hole resistors because of their high stability and signal integrity over different temperature ranges. As such, WNA75RFET are commonly used in automotive electronics and audio applications.
The WNA75RFET is a Through-Hole axial leaded resistor which is lead-free and halogen-free. It is composed of three layers: the cathode layer which is composed of tin/lead, the anode layer composed of tin, and the dielectric layer composed of silicone. The pins are soldered to the anode and the cathode and an elastomeric gasket is used to seal the resistor against moisture. The construction of the WNA75RFET is similar to that of a through hole resistor, but with some additional features.
A WNA75RFET has an exceptionally low resistance value that can be used for any kind of internal and external digital applications. The high insulation resistance also helps to keep the signal free of noise and interference. Additionally, at high frequencies, this type of resistor is able mitigate the effects of multiple reflections.
When it comes to its working principle, the WNA75RFET can be thought of as a lower impedance version of the Through Hole resistor. It has a higher resistance than the Through Hole resistor but with a much lower tolerance of the power supply voltage. The WNA75RFET is designed with an integrated Dynamic Performance Design (DPD) that enables it to adjust the performance parameters depending on certain environmental conditions, such as temperature, voltage, and current.
The WNA75RFET is a reliable through hole resistor that offers excellent dynamic characteristics and exceptional signal integrity. Its high insulation resistance helps to reduce any noise and interference due to its low-resistance value. Additionally, it is ideal for different automotive electronics and audio applications, as well as those requiring low power consumption, due to its low tolerance of the power supply voltage.
The specific data is subject to PDF, and the above content is for reference
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