WNB15RFET Allicdata Electronics

WNB15RFET Resistors

Allicdata Part #:

WNB15RFETR-ND

Manufacturer Part#:

WNB15RFET

Price: $ 0.30
Product Category:

Resistors

Manufacturer: Ohmite
Short Description: RES 15 OHM 1W 1% AXIAL
More Detail: 15 Ohms ±1% 1W Through Hole Resistor Axial Non-Ind...
DataSheet: WNB15RFET datasheetWNB15RFET Datasheet/PDF
Quantity: 1000
1000 +: $ 0.27531
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Series: WN
Packaging: Tape & Reel (TR) 
Part Status: Active
Resistance: 15 Ohms
Tolerance: ±1%
Power (Watts): 1W
Composition: Wirewound
Features: Non-Inductive
Temperature Coefficient: ±20ppm/°C
Operating Temperature: -55°C ~ 150°C
Package / Case: Axial
Supplier Device Package: Axial
Size / Dimension: 0.130" Dia x 0.276" L (3.30mm x 7.00mm)
Height - Seated (Max): --
Number of Terminations: 2
Failure Rate: --
Description

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Through Hole Resistors possess remarkable abilities to withstand high temperatures and they are able to provide an enormous array of frequencies at any given moment. Recently, the broad use of these components has led to the emergence of the WNB15RFET - a surface mount resistor featuring a wide array of operation. In this article, we will take a deeper look at the application field and working principle of the WNB15RFET.

Applications of WNB15RFET

Despite looking quite similar to some standard resistors, the WNB15RFET possesses a unique number of applications. Their signal-shaping characteristics make them ideal for a variety of applications, such as amplifiers, transducers, and converters. Furthermore, the device is also suitable for use in a number of temperature-sensitive applications, such as data centers, high-end audio equipment, and regulation systems. As a result, the use of this surface mount component has become increasingly popular in commercial and industrial applications.

Working Principle of the WNB15RFET

The working principle of the WNB15RFET is based on a “Resistor-FET” architecture, which uses an insulated gate field effect transistor (IGFET) for amplification. The IGFET is used to control the heating element, while the resistor is used for the voltage drop in the device. This combination ensures that the transistor is able to regulate the voltage and current levels of the device, thereby providing the desired filtration and gain characteristics. Furthermore, the resistor element in the device is also able to provide a wide array of options for operation, ranging from low frequency to high-frequency applications.

The WNB15RFET is also designed to provide superior thermal protection from moisture and dust corrosion. This is achieved by using a special epoxy coating, which helps to improve the overall efficiency and reliability of the device. The WNB15RFET is also available in both through hole and surface mount solutions, making it the ideal choice for commercial and industrial applications.

Conclusion

It is clear that the WNB15RFET is an excellent device for applications that require high levels of precision and reliability. The combination of a resistor and an insulated gate field effect transistor provides an efficient filtering and gain of signals that making it more ideal for use in temperature-sensitive applications. Furthermore, its thermally protective epoxy coating also ensures that the device is able to withstand high temperatures without any risk of damage. All in all, the WNB15RFET is an ideal choice for through hole resistor applications.

The specific data is subject to PDF, and the above content is for reference

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