XP0NG8A00L Allicdata Electronics

XP0NG8A00L Discrete Semiconductor Products

Allicdata Part #:

XP0NG8A00LTR-ND

Manufacturer Part#:

XP0NG8A00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 0.15W SMINI6
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: XP0NG8A00L datasheetXP0NG8A00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SMINI6-G1
Description

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Introduction

The XP0NG8A00L is a single, pre-biased, bipolar junction transistor (BJT). It has a wide range of applications and is highly regarded in the world of electronics. In this article, we will take a closer look at the applications and working principles of the XP0NG8A00L.

Applications

The XP0NG8A00L is suitable for use in a variety of applications, such as audio amplifiers, switching circuits, and other high performance applications. It incorporates both a collector current and a controlled base current, which makes it highly efficient. It can be used to switch large voltages and currents with low power consumption, as well as to provide high current gain. Furthermore, it can be used to amplify low level signals with improved noise immunity.

Working Principle

The XP0NG8A00L works by allowing a large amount of current to flow from the collector to the emitter, when sufficient base current is applied. This current is divided into a small amount, which is proportional to the base current, and a larger amount, which is proportional to the collector current.

The XP0NG8A00L works in two particular ways, which are known as the common emitter configuration and the common base configuration. The common emitter configuration is suitable for amplifying signals, while the common base configuration is used for switching large voltages. The XP0NG8A00L is capable of providing current gain of up to 500 in the common emitter configuration, and up to 1000 in the common base configuration.

Conclusion

In conclusion, the XP0NG8A00L is a single, pre-biased, bipolar junction transistor that can be used in a variety of applications. It offers high current gain and improved noise immunity, as well as low power consumption when switching large voltages and currents. Furthermore, the XP0NG8A00L is capable of working in both the common emitter and common base configurations, allowing for efficient amplification and switching.

The specific data is subject to PDF, and the above content is for reference

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