XP0NG8A00L Discrete Semiconductor Products |
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Allicdata Part #: | XP0NG8A00LTR-ND |
Manufacturer Part#: |
XP0NG8A00L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 0.15W SMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | XP0NG8A00L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased + Diode |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SMINI6-G1 |
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Introduction
The XP0NG8A00L is a single, pre-biased, bipolar junction transistor (BJT). It has a wide range of applications and is highly regarded in the world of electronics. In this article, we will take a closer look at the applications and working principles of the XP0NG8A00L.
Applications
The XP0NG8A00L is suitable for use in a variety of applications, such as audio amplifiers, switching circuits, and other high performance applications. It incorporates both a collector current and a controlled base current, which makes it highly efficient. It can be used to switch large voltages and currents with low power consumption, as well as to provide high current gain. Furthermore, it can be used to amplify low level signals with improved noise immunity.
Working Principle
The XP0NG8A00L works by allowing a large amount of current to flow from the collector to the emitter, when sufficient base current is applied. This current is divided into a small amount, which is proportional to the base current, and a larger amount, which is proportional to the collector current.
The XP0NG8A00L works in two particular ways, which are known as the common emitter configuration and the common base configuration. The common emitter configuration is suitable for amplifying signals, while the common base configuration is used for switching large voltages. The XP0NG8A00L is capable of providing current gain of up to 500 in the common emitter configuration, and up to 1000 in the common base configuration.
Conclusion
In conclusion, the XP0NG8A00L is a single, pre-biased, bipolar junction transistor that can be used in a variety of applications. It offers high current gain and improved noise immunity, as well as low power consumption when switching large voltages and currents. Furthermore, the XP0NG8A00L is capable of working in both the common emitter and common base configurations, allowing for efficient amplification and switching.
The specific data is subject to PDF, and the above content is for reference
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