Allicdata Part #: | XZRNI55W-3-ND |
Manufacturer Part#: |
XZRNI55W-3 |
Price: | $ 0.08 |
Product Category: | Sensors, Transducers |
Manufacturer: | SunLED |
Short Description: | PHOTOTRANSISTOR WATER CLR SMD |
More Detail: | Phototransistor Top View 1206 (3216 Metric) |
DataSheet: | XZRNI55W-3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.07089 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Dark (Id) (Max): | 100nA |
Wavelength: | -- |
Viewing Angle: | -- |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Orientation: | Top View |
Operating Temperature: | -40°C ~ 85°C (TA) |
Package / Case: | 1206 (3216 Metric) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Optical Sensors - Phototransistors are a type of photodetectors which produce electrical current when exposed to light. The XZRNI55W-3 is an example of such a device, and is designed for applications were a moderate to high signal to noise ratio is desired. It features a NPN transistor with a built-in optical photogate, a high current-gain to speed up the amplification of input signals, and low dark current to reduce noise. In addition, it has a low trigger angle to reduce dead time and low power consumption.
The XZRNI55W-3 optical detector is widely used in commercial applications, such as lighting control, medical equipment, and security systems. Its features make it ideal for applications that require fast response times, high sensitivity, and accurate detection.
The working principle of the XZRNI55W-3 optical sensor is based on the principles of semiconductor phototransistor. When exposed to light, photons strike the semiconductor P-N junction, creating electron-hole pairs. The holes move toward the P-type semiconductor and the electrons move toward the N-type semiconductor. This sets up a voltage across the junction, which causes a current to flow in the external circuit.
The external circuit including a resistor and capacitor is connected to the P-N junction. When illuminated with light, the current flowing through the resistor causes a voltage to be created at the junction, which is then amplified by the internal transistor. When the voltage is large enough, it allows current to flow through the LED.
The XZRNI55W-3 offers several advantages over other phototransistor devices. Firstly, it has a wide working range of up to 200mA and can operate in both short and long wavelengths. Secondly, it has a wide dynamic range and low power consumption, and is capable of operating at high temperatures and in wet conditions. Finally, it has a high signal-to-noise ratio, enabling it to accurately detect even subtle changes in light intensity.
In conclusion, the XZRNI55W-3 optical sensor offers many advantages for a wide range of applications. It has a wide working range, good dynamic range, low power consumption, and its low noise makes it an ideal choice for use in lighting control, medical equipment, and security systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
XZRNI56W-1 | SunLED | 0.08 $ | 2000 | LED 3.0X1.0MM PHOTOTRANS ... |
XZRNI55W-3 | SunLED | 0.08 $ | 1000 | PHOTOTRANSISTOR WATER CLR... |
XZRNI45S | SunLED | 0.09 $ | 1000 | PHOTOTRANSISTOR WATER CLR... |
PHOTO TRANS CLR LEN 800NM TO-18Phototran...
PHOTOTRANSISTOR SIDE FACE BK RADPhototra...
PHOTOTRNS SILCN NPN HERMETC PILLPhototra...
PHOTOTRANSISTOR NPN 830NM TO-18Phototran...
PHOTOTRANSISTOR NPN 890NM TO-18Phototran...
PHOTOTRANSISTOR NPN SFHPhototransistor 9...