SMDJ33AHR7G Allicdata Electronics

SMDJ33AHR7G Circuit Protection

Allicdata Part #:

SMDJ33AHR7G-ND

Manufacturer Part#:

SMDJ33AHR7G

Price: $ 0.27
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TVS DIODE 33V 53.3V DO214AB
More Detail: N/A
DataSheet: SMDJ33AHR7G datasheetSMDJ33AHR7G Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1700 +: $ 0.24343
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Series: Automotive, AEC-Q101, SMDJ
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 33V
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Current - Peak Pulse (10/1000µs): 56.3A
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Description

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TVS (transient voltage suppression) diodes are a vital component of electronic protection circuits. They are intended to limit the magnitude of transient overvoltages, redirecting the surge current away from sensitive electronic components and effectively protect them against damage. SMDJ33AHR7G is a unidirectional TVS diode, which is available in SMA/SMB surface mount type and its working principle relies on the avalanche breakdown of a semiconductor junction.

The SMDJ33AHR7G is designed to provide an economical solution for ESD (electrostatic discharge) protection in consumer electronics. The device is characterized by high reliability, low operating and clamping voltages, fast response times, and minimal stored energy requirements in compliance with IEC61000-4-2 level 4, 15KV (air) and 8KV (contact) requirements.

The SMDJ33AHR7G is available in a variety of packages, with outstanding Peak Pulse Power Dissipation (PPPD) levels up to 8.5kW (10/1000μs). The device is suitable for use in various applications, including:

  • Computer peripheral devices
  • Portable storage devices
  • Test and measurement equipment
  • Communication systems
  • Consumer electronics

The working principle of the SMDJ33AHR7G is based on the Avalanche breakdown of a semiconductor diode junction. In an ideal diode, the voltage across the junction, referred to as the Breakdown Voltage (BV), is constant. In the SMDJ33AHR7G, however, the BV is dependent on the current that flows through the device. When the voltage across the junction surpasses the BV, the diode switches from a low-impedance state to a high-impedance state. The avalanche breakdown induces a current surge, which is dissipated as heat energy.

The avalanche avalanche breakdown of the SMDJ33AHR7G is capable of handling high surge currents up to 8.5kW in a 10/1000μs pulse. The device exhibits fast response times and relatively low holding voltage to provide an ideal solution for applications that require rapid and reliable ESD protection.

In summary, the SMDJ33AHR7G is a unidirectional TVS Diode that is designed to provide an economical solution for ESD protection in a variety of applications. The device is characterized by low operating and clamping voltages, fast response times, high reliability, and minimal stored energy requirements. It is available in a variety of packages with outstanding peak pulse power dissipation levels up to 8.5kW (10/1000μs), and works by relying on the avalanche breakdown of a semiconductor junction.

The specific data is subject to PDF, and the above content is for reference

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